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Title: CMOS-compatible, AlScN-based integrated electro-optic phase shifter
Abstract Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic phase shifting and modulation. Its CMOS-compatibility could facilitate large-scale production of integrated photonic modulators, and it exhibits an enhanced second-order optical nonlinearity compared to intrinsic AlN, indicating the possibility for efficient modulation. Here, we measure the electro-optic effect in Al0.80Sc0.20N-based phase shifters. We utilized the TM0 mode, allowing use of ther33electro-optic coefficient, and demonstratedVπLaround 750 V cm. Since the electro-optic response is smaller than expected, we discuss potential causes for the reduced response and future outlook for AlScN-based photonics.  more » « less
Award ID(s):
1944248
PAR ID:
10591256
Author(s) / Creator(s):
; ; ; ; ;
Publisher / Repository:
De Gruyter
Date Published:
Journal Name:
Nanophotonics
Volume:
13
Issue:
18
ISSN:
2192-8614
Page Range / eLocation ID:
3327 to 3335
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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