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Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38–340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 ± 0.02) m0 to (0.34 ± 0.01) m0 at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 ± 0.002) m0. A possible explanation for the different findings from THz OHE and MIR OHE is proposed.
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Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect
We report on the free charge carrier properties of a two-dimensional electron gas (2DEG) in an AlN/AlxGa1–xN high electron mobility transistor structure with a high aluminum content (x = 0.78). The 2DEG sheet density Ns=(7.3±0.7)×1012 cm−2, sheet mobility μs=(270±40) cm2/(Vs), sheet resistance Rs=(3200±500) Ω/◻, and effective mass meff=(0.63±0.04)m0 at low temperatures (T=5 K) are determined by terahertz (THz) optical Hall effect measurements. The experimental 2DEG mobility in the channel is found within the expected range, and the sheet carrier density is in good agreement with self-consistent Poisson–Schrödinger calculations. However, a significant increase in the effective mass of 2DEG electrons at low temperatures is found in comparison with the respective value in bulk Al0.78Ga22N (meff=0.334 m0). Possible mechanisms for the enhanced 2DEG effective mass parameter are discussed and quantified using self-consistent Poisson–Schrödinger calculations.
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- Award ID(s):
- 1808715
- PAR ID:
- 10594716
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 120
- Issue:
- 25
- ISSN:
- 0003-6951
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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