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In this study, the growth of scandium nitride (100) single crystals with high electron mobility and high thermal conductivity was demonstrated by physical vapor transport (PVT). Single crystals were grown in the temperature range of 1900 C–2140 C under a nitrogen pressure between 15 and 20 Torr. Single crystal tungsten (100) was used as a nearly lattice constant matched seed crystal. Growth for 20 days resulted in a 2mm thick crystal. Hall-effect measurements revealed that the layers were n-type with a 300 K electron concentration and a mobility of 2.17 x 1021 cm-3 and 73 cm2/V s, respectively. Consequently, this ScN crystal had a low electrical resistivity, 3.94 x 10- 5 Xcm. The thermal conductivity was in the range of 51–56W/mK, three times higher than those in previous reports for ScN thin films. This study demonstrates the viability of the PVT crystal growth method for producing high quality bulk scandium nitride single crystals.
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Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures
Unlike naturally occurring oxide crystals such as ruby and gemstones, there are no naturally occurring nitride crystals because the triple bond of the nitrogen molecule is one of the strongest bonds in nature. Here, we report that when the transition metal scandium is subjected to molecular nitrogen, it self-catalyzes to break the nitrogen triple bond to form highly crystalline layers of ScN, a semiconductor. This reaction proceeds even at room temperature. Self-activated ScN films have a twin cubic crystal structure, atomic layering, and electronic and optical properties comparable to plasma-based methods. We extend our research to showcase Sc’s scavenging effect and demonstrate self-activated ScN growth under various growth conditions and on technologically significant substrates, such as 6H–SiC, AlN, and GaN. Ab initio calculations elucidate an energetically efficient pathway for the self-activated growth of crystalline ScN films from molecular N2. The findings open a new pathway to ultralow-energy synthesis of crystalline nitride semiconductor layers and beyond.
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- Award ID(s):
- 2039380
- PAR ID:
- 10594961
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- APL Materials
- Volume:
- 12
- Issue:
- 11
- ISSN:
- 2166-532X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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