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Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions
- Award ID(s):
- 2212639
- PAR ID:
- 10615046
- Publisher / Repository:
- Elsevier B. V.
- Date Published:
- Journal Name:
- Journal of crystal growth
- ISSN:
- 0022-0248
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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We present our study on AlInN-based ultraviolet (UV) core-shell nanowire light-emitting diodes (LEDs) utilizing a polarization-induced doping technique. Due to the formation of a core-shell structure, the non-radiative recombination on the nanowire surface is significantly reduced. Moreover, we have successfully fabricated AlInN/GaN-based core-shell nanowire UV LED employing polarization-engineered quantum barriers instead of conventional structures. The LED device exhibits significantly improved carrier concentration in the active region and decreased electron leakage due to the gradually raised effective conduction band barrier heights. At room temperature, the AlInN LEDs exhibit strong and stable emission at 296 nm. We provide a promising approach to fabricating high-performance light emitters.more » « less
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