Epitaxial films of cubic boron nitride (c-BN) have been grown on single-crystal boron-doped diamond substrates by electron cyclotron resonance plasma-enhanced chemical vapor deposition using gas mixtures of Ar–He–N2–BF3–H2. The resulting c-BN films have been characterized using in situ x-ray photoelectron spectroscopy to establish the growth surface bonding (i.e., sp3 or sp2). The interface and film crystal structure were characterized with high resolution electron microscopy and electron-energy-loss spectroscopy. This study considers three stages of the growth process: in situ surface preparation, initial nucleation and growth of c-BN, and growth of the epitaxial c-BN layer. Prior studies from our group have established that hydrogen gas phase concentration affects fluorine-induced etching and c-BN nucleation. The results of this study establish that by optimizing the surface chemistry for all three stages of the growth process, it is possible to achieve an adherent, oriented epitaxial c-BN layer, a workable growth rate (∼50 nm/hr), cubic phase BN throughout, and negligible sp2 bonding except at the interface.
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Synthesis of Core/Shell WO3/WS2 Heterostructure Nanowires with Negative Photo-Responsiveness
WO3/WS2 core/shell nanowires were synthesized using a scalable fabrication method by combining wet chemical etching and chemical vapor deposition (CVD). Initially, WO3 nanowires were formed through wet chemical etching using a potassium hydroxide (KOH) solution, followed by oxidation at 650 °C. These WO3 nanowires were then sulfurized at 900 °C to form a WS2 shell, resulting in WO3/WS2 core/shell nanowires with diameters ranging from 90 to 370 nm. The synthesized nanowires were characterized using scanning electron microscopy (SEM), Raman, energy-dispersive X-ray spectroscopy (EDS), X-ray diffractometry (XRD), and transmission electron microscopy (TEM). The shell is composed of 2D WS2 layers with uniformly spaced 2D layers as well as the atomically sharp core/shell interface of WO3/WS2. Notably, the WO3/WS2 heterostructure nanowires exhibited a unique negative photoresponse under visible light (405 nm) illumination. This negative photoresponse highlights the importance of interface engineering in these heterostructures and demonstrates the potential of WO3/WS2 core/shell nanowires for applications in photodetectors and other optoelectronic devices.
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- Award ID(s):
- 2153228
- PAR ID:
- 10617233
- Publisher / Repository:
- Electronic Materials Letters
- Date Published:
- Journal Name:
- Electronic Materials Letters
- Volume:
- 21
- Issue:
- 1
- ISSN:
- 1738-8090
- Page Range / eLocation ID:
- 87 to 93
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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