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Abstract Enzymatic DNA amplification‐based approaches involving intercalating DNA‐binding fluorescent dyes and expensive optical detectors are the gold standard for nucleic acid detection. As components of a simplified and miniaturized system, conventional silicon‐based ion sensitive field effect transistors (ISFETs) that measure a decrease in pH due to the generation of pyrophosphates during DNA amplification have been previously reported. In this article, Bst polymerase in a loop‐mediated isothermal amplification (LAMP) reaction combined with target‐specific primers and crumpled graphene field effect transistors (gFETs) to electrically detect amplification by sensing the reduction in primers is used. Graphene is known to adsorb single‐stranded DNA due to noncovalent π–π bonds, but not double‐stranded DNA. This approach does not require any surface functionalization and allows the detection of primer concentrations at the endpoint of reactions. As recently demonstrated, the crumpled gFET over the conventional flat gFET sensors due to their superior sensitivity is chosen. The endpoint of amplification reaction with starting concentrations down to 8 × 10−21min 90 min including the time of amplification and detection is detected. With its high sensitivity and small footprint, this platform will help bring complex lab‐based diagnostic and genotyping amplification assays to the point‐of‐care.
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This content will become publicly available on December 1, 2025
An Enhanced Verilog-A Model for Graphene Field-Effect Transistors Using Variable Fermi Velocity
This paper presents a novel Verilog-A model for the Fermi velocity in Graphene Field-Effect Transistors (GFETs). The Fermi velocity is an important parameter associated with the energy spectrum of the delocalized bonds in graphene which impact the performance of a GFET. Unlike existing GFET models where the Fermi velocity is assumed to have a constant value, the proposed model considers carrier concentrations in the channel and gate dielectrics to create a closed-form solution for the Fermi velocity, a parameter previously demonstrated to vary based on these two factors. The proposed mathematical model is then adapted to Verilog-A for interfacing with computer-aided design (CAD) circuit simulators. To demonstrate the accuracy of the proposed model, the simulation results are compared to measured drain–source currents obtained from various GFET devices (including GFETs measured by authors). The measured results show good agreement with the values predicted using the proposed model (<±1%), demonstrating the superior accuracy of the model compared to other published Verilog-A-based models, especially around the Dirac point.
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- Award ID(s):
- 2221925
- PAR ID:
- 10617339
- Publisher / Repository:
- MDPI
- Date Published:
- Journal Name:
- Electronics
- Volume:
- 13
- Issue:
- 24
- ISSN:
- 2079-9292
- Page Range / eLocation ID:
- 5051
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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