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Metal–dielectric hybrid metamaterials have attracted increasing research interest in recent years because of their novel optical properties and promising applications in the fields of electronic and photonic devices. Dielectric permittivity is a key parameter that strongly influences the optical properties of materials. By self‐assembling the metallic and dielectric components in a pillar‐in‐matrix structure, a strong anisotropic structure forms and results in opposite signs of permittivity components (i.e.,ε|| > 0 andε⊥ < 0, or vice versa) and exotic optical responses including hyperbolic dispersion in the visible to near‐infrared region. Herein, the main approaches of tuning the permittivity in self‐assembled metal–dielectric vertically aligned nanocomposite (VAN) thin films are reviewed, including tuning the metal pillar density and geometry, film strain state and background pressure during growth, and seeking other metal‐free and complex structure designs. Future research directions are also proposed, including unique approaches to improve their thermal stability, integrate on flexible substrates toward wearable device fabrication, and explore real‐time tunable metamaterials.
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This content will become publicly available on December 1, 2025
High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant
As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-kdielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-kdielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-kdielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young’s modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS2field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.
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- PAR ID:
- 10620733
- Author(s) / Creator(s):
- ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; more »
- Publisher / Repository:
- Nature Springer
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 15
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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