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This content will become publicly available on April 21, 2026

Title: Quantification of Contact-Doping Effect in Ultrathin In2O3 Transistors
Award ID(s):
2425498
PAR ID:
10627209
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
IEEE
Date Published:
ISBN:
979-8-3315-4312-9
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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