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Clarifying the Role of Ferroelectric in Expanding the Memory Window of Ferroelectric FETs with Gate-Side Injection: Isolating Contributions from Polarization and Charge Trapping
- Award ID(s):
- 2344819
- PAR ID:
- 10628242
- Publisher / Repository:
- IEEE
- Date Published:
- ISBN:
- 979-8-3503-6542-9
- Page Range / eLocation ID:
- 1 to 4
- Format(s):
- Medium: X
- Location:
- San Francisco, CA, USA
- Sponsoring Org:
- National Science Foundation
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