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Germanium alloyed with α-tin (GeSn) transitions to a direct bandgap semiconductor of significance for optoelectronics. It is essential to localize the carriers within the active region for improving the quantum efficiency in a GeSn based laser. In this work, epitaxial GeSn heterostructure material systems were analyzed to determine the band offsets for carrier confinement: (i) a 0.53% compressively strained Ge 0.97 Sn 0.03 /AlAs; (ii) a 0.81% compressively strained Ge 0.94 Sn 0.06 /Ge; and (iii) a lattice matched Ge 0.94 Sn 0.06 /In 0.12 Al 0.88 As. The phonon modes in GeSn alloys were studied using Raman spectroscopy as a function of Sn composition, that showed Sn induced red shifts in wavenumbers of the Ge–Ge longitudinal optical phonon mode peaks. The material parameter b representing strain contribution to Raman shifts of a Ge 0.94 Sn 0.06 alloy was determined as b = 314.81 ± 14 cm −1 . Low temperature photoluminescence measurements were performed at 79 K to determine direct and indirect energy bandgaps of E g,Γ = 0.72 eV and E g,L = 0.66 eV for 0.81% compressively strained Ge 0.94 Sn 0.06 , and E g,Γ = 0.73 eV and E g,L = 0.68 eV for lattice matched Ge 0.94 Sn 0.06 epilayers. Chemical effects of Sn atomic species were analyzed using X-ray photoelectron spectroscopy (XPS), revealing a shift in Ge 3d core level (CL) spectra towards the lower binding energy affecting the bonding environment. Large valence band offset of Δ E V = 0.91 ± 0.1 eV and conduction band offset of Δ E C,Γ–X = 0.64 ± 0.1 eV were determined from the Ge 0.94 Sn 0.06 /In 0.12 Al 0.88 As heterostructure using CL spectra by XPS measurements. The evaluated band offset was found to be of type-I configuration, needed for carrier confinement in a laser. In addition, these band offset values were compared with the first-principles-based calculated Ge/InAlAs band alignment, and it was found to have arsenic up-diffusion limited to 1 monolayer of epitaxial GeSn overlayer, ruling out the possibility of defects induced modification of band alignment. Furthermore, this lattice matched GeSn/InAlAs heterostructure band offset values were significantly higher than GeSn grown on group IV buffer/substrates. Therefore, a lattice matched GeSn/InAlAs material system has large band offsets offering superior carrier confinement to realize a highly efficient GeSn based photonic device.
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This content will become publicly available on June 3, 2026
Uncooled GeSn MWIR Photodetectors Using Fully Relaxed Thin Triple‐Step Buffer
Abstract GeSn photodetectors monolithically grown on Ge virtual substrates demonstrate mid‐wave infrared (MWIR) detection at room temperature. The lattice mismatch between GeSn and Ge causes dislocations and compressive strain, creating leakage pathways and unwanted indirect band transitions. Designed thin Ge0.91Sn0.09triple‐step buffer layers of ≈175 nm total thickness reduce dislocations and enable full relaxation, showing 100% lattice relaxation and smooth surface roughness of 0.83 nm with shorter auto‐correlation length in surface morphology compared to single‐step buffers. Ge1‐xSnxphotodetectors (x= 0.09, 0.12, and 0.15) on triple‐step buffers withn‐i‐pconfigurations achieve lattice strain relaxations of 99%, 88%, and 80%, respectively. Ge0.91Sn0.09and Ge0.88Sn0.12show gradual variation in auto‐correlation amplitude, while Ge0.85Sn0.15shows an increase due to lattice mismatch. Shockley–Read–Hall recombination current dominates at low reverse bias due to mismatch‐induced dislocations, while band‐to‐band tunneling current dominates at higher reverse bias due to narrowing bandgap under strong electric fields. The photodetectors show extended spectral response with increasing Sn composition ofi‐GeSn active layer sandwiched by barriers. Ge0.88Sn0.12and Ge0.85Sn0.15exhibit extended wavelength cut‐offs of 3.12 and 3.27 µm at room temperature, demonstrating significant potential for silicon‐based MWIR applications.
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- Award ID(s):
- 2328840
- PAR ID:
- 10630054
- Publisher / Repository:
- Wiley-VCH
- Date Published:
- Journal Name:
- Advanced Materials Technologies
- ISSN:
- 2365-709X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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