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1. Producing Tunable Broadband Near-Infrared Emission through Co-Substitution in (Ga _1–x Mg _x )(Ga _1–x Ge _x )O ₃ :Cr ³⁺

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   Zhong, Jiyou; Zeng, Liwei; Zhao, Weiren; Brgoch, Jakoah (November 2022, ACS Applied Materials & Interfaces)
2. Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B _1–x Al _x N, Al _1–x Ga _x N, and Ga _1–x In _x N)

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3. Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc _x Ga _1−x N and Sc _x Al _1−x N

   https://doi.org/10.1002/pssb.201900612  

   Casamento, Joseph; Xing, Huili Grace; Jena, Debdeep (January 2020, physica status solidi (b))

   Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: Sc_xGa_1−xN/GaN and Sc_xAl_1−xN/AlN grown by molecular beam epitaxy (MBE). In the Sc_xGa_1−xN/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 10¹⁹ cm⁻³, with an increase directly correlated with the scandium content. In the Sc_xAl_1−xN–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al₂O₃template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 10¹⁹and 10²¹ cm⁻³, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers. 

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4. High-frequency and below bandgap anisotropic dielectric constants in α -(Al _x Ga _1−x ) ₂ O ₃ (0≤x≤1)

   https://doi.org/10.1063/5.0064528  

   Hilfiker, Matthew; Kilic, Ufuk; Stokey, Megan; Jinno, Riena; Cho, Yongjin; Xing, Huili Grace; Jena, Debdeep; Korlacki, Rafał; Schubert, Mathias (August 2021, Applied Physics Letters)
5. Infrared-active phonon modes and static dielectric constants in α -(Al _x Ga _{1− x} ) ₂ O ₃ (0.18  ≤ x  ≤ 0.54) alloys

   https://doi.org/10.1063/5.0085958  

   Stokey, Megan; Gramer, Teresa; Korlacki, Rafał; Knight, Sean; Richter, Steffen; Jinno, Riena; Cho, Yongjin; Xing, Huili Grace; Jena, Debdeep; Hilfiker, Matthew; et al (March 2022, Applied Physics Letters)

   We determine the composition dependence of the transverse and longitudinal optical infrared-active phonon modes in rhombohedral α-(Al_xGa_1−x)₂O₃alloys by far-infrared and infrared generalized spectroscopic ellipsometry. Single-crystalline high quality undoped thin-films grown on m-plane oriented α-Al₂O₃substrates with x =  0.18, 0.37, and 0.54 were investigated. A single mode behavior is observed for all phonon modes, i.e., their frequencies shift gradually between the equivalent phonon modes of the isostructural binary parent compounds. We also provide physical model line shape functions for the anisotropic dielectric functions. We use the anisotropic high-frequency dielectric constants for polarizations parallel and perpendicular to the lattice c axis measured recently by Hilfiker et al. [Appl. Phys. Lett. 119, 092103 (2021)], and we determine the anisotropic static dielectric constants using the Lyddane–Sachs–Teller relation. The static dielectric constants can be approximated by linear relationships between those of α-Ga₂O₃and α-Al₂O₃. The optical phonon modes and static dielectric constants will become useful for device design and free charge carrier characterization using optical techniques. 

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