An official website of the United States government
Abstract Due to lack of a unified description of the Earth surface temperature, a generic dynamic equation is postulated as an inference from the special case of snow. Solar radiation is explicitly included in the formulation for transparent media such as snow, ice and water while implicitly through (conductive) surface heat flux for non‐transparent media such as soil. The physical parameters of the equation are medium thermal inertia, thermal and radiative diffusivity. The equation for transparent media reduces to the familiar force‐restore model of soil surface temperature when the penetration depth of solar radiation tends to zero. Proof‐of‐concept validation for snow surface temperature as a paradigm of transparent media at three sites in the Arctic and Antarctica confirms the postulated equation as a generic description of the dynamics of surface temperature.
more »
« less
Accurate depth-resolved temperature profiling via thermal-radiation spectroscopy: numerical methods vs machine learning
We present and compare three approaches for accurately retrieving depth-resolved temperature distributions within materials from their thermal-radiation spectra, based on: (1) a nonlinear equation solver implemented in commercial software, (2) a custom-built nonlinear equation solver, and (3) a deep neural network (DNN) model. These methods are first validated using synthetic datasets comprising randomly generated temperature profiles and corresponding noisy thermal-radiation spectra for three different structures: a fused-silica substrate, an indium antimonide substrate, and a thin-film gallium nitride layer on a sapphire substrate. We then assess the performance of each approach using experimental spectra collected from a fused-silica window heated on a temperature-controlled stage. Our results demonstrate that the DNN-based method consistently outperforms conventional numerical techniques on both synthetic and experimental data, providing a robust solution for accurate depth-resolved temperature profiling.
more »
« less
- Award ID(s):
- 2244259
- PAR ID:
- 10634421
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optics Express
- Volume:
- 33
- Issue:
- 18
- ISSN:
- 1094-4087; OPEXFF
- Format(s):
- Medium: X Size: Article No. 39117
- Size(s):
- Article No. 39117
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
GeSn films were simultaneously deposited on Si (100), Si (111), c-plane sapphire (Al2O3), and fused silica substrates to investigate the impact of the substrate on the resulting GeSn film. The electronic, structural, and optical properties of these films were characterized by temperature-dependent Hall-effect measurements, x-ray diffractometry, secondary ion mass spectrometry, and variable angle spectroscopic ellipsometry. All films were polycrystalline with varying degrees of texturing. The film on Si (100) contained only GeSn (100) grains, 40.4 nm in diameter. The film deposited on Si (111) contained primarily GeSn (111) grains, 36.4 nm in diameter. Both films deposited on silicon substrates were fully relaxed. The layer deposited on Al2O3 contained primarily GeSn (111) grains, 41.3 nm in diameter. The film deposited on fused silica was not textured, and the average grain size was 35.0 nm. All films contained ∼5.6 at. % Sn throughout the layer, except for the film deposited on Al2O3, which contained 7.5% Sn. The films deposited on Si (111), Al2O3, and fused silica exhibit p-type conduction over the entire temperature range, 10–325 K, while the layer deposited on the Si (100) substrate shows a mixed conduction transition from p-type at low temperature to n-type above 220 K. From ∼175 to 260 K, both holes and electrons contribute to conduction. Texturing of the GeSn film on Si (100) was the only characteristic that set this film apart from the other three films, suggesting that something related to GeSn (100) crystal orientation causes this transition from p- to n-type conduction.more » « less
-
Bauxite and silica particles are candidate materials for solar thermal energy storage at high temperatures. The temperature-dependent emittance of packed beds with bauxite and silica particles was measured using a newly upgraded emissometer at wavelengths 2 μm ≤ λ ≤ 16 μm and temperatures up to ~730 K. The room-temperature emittance was obtained from the measured directional-hemispherical reflectance. A fused silica disc was used to test the emissometer by comparing the measured spectral emittance with the calculated emittance from a fitted Lorentz oscillator model. For the polycrystalline silica particles and the fused silica disc, the measured emittance increases with temperature in the mid-infrared region. The underlying mechanism is interpreted as the temperature-dependent damping coefficient in the Lorentz oscillator model. Two types of bauxite particles with different compositions and sizes were investigated. For λ > 10 μm, the measured emittance at elevated temperatures is higher than that at room temperature. In the region 2 μm < λ < 6 μm, the temperature dependence varies for different types of particles. The total emittance of bauxite particle beds was calculated by spectral integration using Planck’s distribution at the prescribed temperature. The calculated total emittance is between 0.89 and 0.96, but it does not change monotonically with temperature.more » « less
-
Stress fields imparted with an ultrafast laser can correct low spatial frequency surface figure error of mirrors through ultrafast laser stress figuring (ULSF): the formation of nanograting structures within the bulk substrate generates localized stress, creating bending moments that equilibrize via wafer deformation. For ULSF to be used as an optical figuring process, the ultrafast laser generated stress must be effectively permanent or risk unwanted figure drift. Two isochronal annealing experiments were performed to measure ultrafast laser-generated stress stability in fused silica and Corning ultra-low expansion (ULE) wafers. The first experiment tracked changes to induced astigmatism up to 1000 °C on 25.4 mm-diameter wafers. Only small changes were measured after each thermal cycle up to 500 °C for both materials, but significant changes were observed at higher temperatures. The second experiment tracked stress changes in fused silica and ULE up to 500 °C but with 4 to 16× higher signal-to-noise ratio. Change in trefoil on 100 mm-diameter wafers was measured, and the induced stress in fused silica and ULE was found to be stable after thermal cycling up to 300 °C and 200 °C, respectively, with larger changes at higher temperatures.more » « less
