Abstract We report evidence of a finite density of states at the Fermi level at the surface of epitaxial thin films of the narrow bandgap Mott insulator Sr3Ir2O7(001). The Brillouin zone critical points for Sr3Ir2O7(001) thin films have been determined by a comparison of the band mapping from angle-resolved photoemission spectroscopy and low energy electron diffraction. Angle-resolved x-ray photoemission studies reveal the surface termination of Sr3Ir2O7(001) is Sr–O. The absence of dispersion with photon energy, or changing wave vector along the surface normal, indicates the two-dimensional character of the bands contributing to the density of states close to the Fermi level for Sr3Ir2O7(001) thin films. Thus, the finite density of states at the Fermi level is attributed to surface states or surface resonances. The appearance of a finite density of states at the Fermi level is consistent with the increased conductivity with decreasing film thickness for ultrathin Sr3Ir2O7(001) films. 
                        more » 
                        « less   
                    This content will become publicly available on March 14, 2026
                            
                            The anomalous temperature dependent low energy electron diffraction intensity at epitaxial Sr 3 Ir 2 O 7 thin film surfaces
                        
                    
    
            Abstract We report on the temperature dependent low energy electron diffraction (LEED) studies of 12 nm epitaxial Sr3Ir2O7(001) thin films. The Debye temperature has been extracted from the temperature-dependence of LEED intensity at elevated temperatures and different electron kinetic energies. For the most surface sensitive LEED, obtained at the lowest electron kinetic energies, the extracted surface Debye temperature is 270 ± 22 K, which is much lower than the 488 ± 40 K Debye temperature obtained using higher electron kinetic energies. Surprisingly, the LEED diffraction intensity, at the lowest electron kinetic energies, increases rather than decreases, with increasing sample temperatures up to about 440 K. This anomalous behavior has been attributed to the reduction of the lattice vibrational amplitudes along the surface normal. This damping of the normal mode vibrations with increasing temperature results from the enhanced electronic screening via thermally activated carriers. This scenario is corroborated by the transport measurement, showing that Sr3Ir2O7is a narrow band Mott insulator with a band gap of about 32 meV. We have identified criteria for finding anomalous scattering behavior in other transition metal oxide systems. 
        more » 
        « less   
        
    
                            - Award ID(s):
- 2044049
- PAR ID:
- 10636316
- Publisher / Repository:
- IOP Science
- Date Published:
- Journal Name:
- Journal of Physics: Condensed Matter
- Volume:
- 37
- Issue:
- 16
- ISSN:
- 0953-8984
- Page Range / eLocation ID:
- 165402
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
- 
            
- 
            Abstract GeI 2 is an interesting two-dimensional wide-band gap semiconductor because of diminished edge scattering due to an absence of dangling bonds. Angle-resolved x-ray photoemission spectroscopy indicates a germanium rich surface, and a surface to bulk core-level shift of 1.8 eV in binding energy, between the surface and bulk components of the Ge 2p 3/2 core-level, making clear that the surface is different from the bulk. Temperature dependent studies indicate an effective Debye temperature ( θ D ) of 186 ± 18 K for the germanium x-ray photoemission spectroscopy feature associated with the surface. These measurements also suggest an unusually high effective Debye temperature for iodine (587 ± 31 K), implying that iodine is present in the bulk of the material, and not the surface. From optical absorbance, GeI 2 is seen to have an indirect (direct) optical band gap of 2.60 (2.8) ± 0.02 (0.1) eV, consistent with the expectations. Temperature dependent magnetometry indicates that GeI 2 is moment paramagnetic at low temperatures (close to 4 K) and shows a diminishing saturation moment at high temperatures (close to 300 K and above).more » « less
- 
            Abstract The local compositional heterogeneity associated with the short‐range ordering of Mg and Nb in PbMg1/3Nb2/3O3(PMN) is correlated with its characteristic relaxor ferroelectric behavior. Fully ordered PMN is not prepared as a bulk material. This work examines the relaxor behavior in PMN thin films grown at temperatures below 1073 K by artificially reducing the degree of disorder via synthesis of heterostructures with alternate layers of Pb(Mg2/3Nb1/3)O3and PbNbO3, as suggested by the random‐site model. 100 nm thick, phase‐pure films are grown epitaxially on (111) SrTiO3substrates using alternate target timed pulsed‐laser deposition of Pb(Mg2/3Nb1/3)O3and PbNbO3targets with 20% excess Pb. Selected area electron diffraction confirms the emergence of (1/2, 1/2, 1/2) superlattice spots with randomly distributed ordered domains as large as ≈150 nm. These heterostructures exhibit a dielectric constant of 800, loss tangents of ≈0.03 and 2× remanent polarization of ≈11 µC cm−2at room temperature. Polarization–electric field hysteresis loops, Rayleigh data, and optical second‐harmonic generation measurements are consistent with the development of ferroelectric domains below 140 K. Temperature‐dependent permittivity measurements demonstrate reduced frequency dispersion compared to short range ordered PMN films. This work suggests a continuum between normal and relaxor ferroelectric behavior in the engineered PMN thin films.more » « less
- 
            Electronic structure calculations indicate that the Sr2FeSbO6double perovskite has a flat-band set just above the Fermi level that includes contributions from ordinary subbands with weak kinetic electron hopping plus a flat subband that can be attributed to the lattice geometry and orbital interference. To place the Fermi energy in that flat band, electron-doped samples with formulas Sr2-xLaxFeSbO6(0 ≤x≤ 0.3) were synthesized, and their magnetism and ambient temperature crystal structures were determined by high-resolution synchrotron X-ray powder diffraction. All materials appear to display an antiferromagnetic-like maximum in the magnetic susceptibility, but the dominant spin coupling evolves from antiferromagnetic to ferromagnetic on electron doping. Which of the three subbands or combinations is responsible for the behavior has not been determined.more » « less
- 
            Abstract The inverse spinel ferrimagnetic NiCo2O4presents a unique model system for studying the competing effects of crystalline fields, magnetic exchange, and various types of chemical and lattice disorder on the electronic and magnetic states. Here, magnetotransport anomalies in high‐quality epitaxial NiCo2O4thin films resulting from the complex energy landscape are reported. A strong out‐of‐plane magnetic anisotropy, linear magnetoresistance, and robust anomalous Hall effect above 300 K are observed in 5–30 unit cell NiCo2O4films. The anomalous Hall resistance exhibits a nonmonotonic temperature dependence that peaks around room temperature, and reverses its sign at low temperature in films thinner than 20 unit cells. The scaling relation between the anomalous Hall conductivity and longitudinal conductivity reveals the intricate interplay between the spin‐dependent impurity scattering, band intrinsic Berry phase effect, and electron correlation. This study provides important insights into the functional design of NiCo2O4for developing spinel‐based spintronic applications.more » « less
 An official website of the United States government
An official website of the United States government 
				
			 
					 
					
