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1. Sr(Ag 1−x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1−x Li x ) 2 Se 2 ] Tunable Direct Band Gap Semiconductors

   https://doi.org/10.1002/ange.202301191  

   Zhou, Xiuquan ; Wilfong, Brandon ; Chen, Xinglong ; Laing, Craig ; Pandey, Indra R. ; Chen, Ying‐Pin ; Chen, Yu‐Sheng ; Chung, Duck‐Young ; Kanatzidis, Mercouri G. ( February 2023 , Angewandte Chemie)

   Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid‐state reactions, leading to crystal formation of kinetically stable compounds. In this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of two‐dimensional Sr(Ag_1−xLi_x)₂Se₂layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag_1−xLi_x)₂Se₂withxup to 0.45. In addition, a new type of intergrowth compound [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] was synthesized upon further reaction of Sr(Ag_1−xLi_x)₂Se₂with SrSe. Both Sr(Ag_1−xLi_x)₂Se₂and [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] exhibit a direct band gap, which increases with increasing Li substitution (x). Therefore, the band gap of Sr(Ag_1−xLi_x)₂Se₂can be precisely tuned via fine‐tuningxthat is controlled by only the flux ratio and temperature.

    

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2. Sr(Ag 1−x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1−x Li x ) 2 Se 2 ] Tunable Direct Band Gap Semiconductors

   https://doi.org/10.1002/anie.202301191  

   Zhou, Xiuquan ; Wilfong, Brandon ; Chen, Xinglong ; Laing, Craig ; Pandey, Indra R. ; Chen, Ying‐Pin ; Chen, Yu‐Sheng ; Chung, Duck‐Young ; Kanatzidis, Mercouri G. ( February 2023 , Angewandte Chemie International Edition)

   Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid‐state reactions, leading to crystal formation of kinetically stable compounds. In this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of two‐dimensional Sr(Ag_1−xLi_x)₂Se₂layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag_1−xLi_x)₂Se₂withxup to 0.45. In addition, a new type of intergrowth compound [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] was synthesized upon further reaction of Sr(Ag_1−xLi_x)₂Se₂with SrSe. Both Sr(Ag_1−xLi_x)₂Se₂and [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] exhibit a direct band gap, which increases with increasing Li substitution (x). Therefore, the band gap of Sr(Ag_1−xLi_x)₂Se₂can be precisely tuned via fine‐tuningxthat is controlled by only the flux ratio and temperature.

    

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3. Emergence of quasiparticles in a doped Mott insulator

   https://doi.org/10.1038/s42005-020-00480-5  

   Wang, Yao ; He, Yu ; Wohlfeld, Krzysztof ; Hashimoto, Makoto ; Huang, Edwin W ; Lu, Donghui ; Mo, Sung-Kwan ; Komiya, Seiki ; Jia, Chunjing ; Moritz, Brian ; et al ( December 2020 , Communications Physics)

   How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-T_ccuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La_2−xSr_xCuO₄(0 ≤x≤ 0.15). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-T_ccuprates.

    

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4. Ferromagnetic order beyond the superconducting dome in a cuprate superconductor

   https://doi.org/10.1126/science.aax1581  

   Sarkar, Tarapada ; Wei, D. S. ; Zhang, J. ; Poniatowski, N. R. ; Mandal, P. R. ; Kapitulnik, A. ; Greene, Richard L. ( April 2020 , Science)

   According to conventional wisdom, the extraordinary properties of the cuprate high-temperature superconductors arise from doping a strongly correlated antiferromagnetic insulator. The highly overdoped cuprates—whose doping lies beyond the dome of superconductivity—are considered to be conventional Fermi liquid metals. We report the emergence of itinerant ferromagnetic order below 4 kelvin for doping beyond the superconducting dome in thin films of electron-doped La_2–xCe_xCuO₄(LCCO). The existence of this ferromagnetic order is evidenced by negative, anisotropic, and hysteretic magnetoresistance, hysteretic magnetization, and the polar Kerr effect, all of which are standard signatures of itinerant ferromagnetism in metals. This surprising result suggests that the overdoped cuprates are strongly influenced by electron correlations.

    

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5. The Vacancy‐Induced Electronic Structure of the SrTiO 3−δ Surface

   https://doi.org/10.1002/aelm.201800460  

   Cook, Seyoung ; Dylla, Maxwell T. ; Rosenberg, Richard A. ; Mansley, Zachary R. ; Snyder, G. Jeffrey ; Marks, Laurence D. ; Fong, Dillon D. ( November 2018 , Advanced Electronic Materials)

   The emergence of a 2D electron gas (2DEG) on the (001) surface of oxygen‐deficient strontium titanate (SrTiO_3−δ) is investigated. Using in situ soft X‐ray spectroscopy and effective mass modeling, a series of quantitative band diagrams are developed to describe the evolution of near‐surface and bulk carrier concentrations, downward band bending, and Fermi level along a lateral gradient of oxygen vacancies formed on SrTiO_3−δby direct‐current resistive heating under ultrahigh vacuum conditions. Electrons are accumulated over a 3 nm region near the surface, confined within a potential well with saturated 300 meV downward band bending. The relation between Fermi levels and carrier concentrations near the surface suggests the density of states near the surface is much lower than the bulk density of states, which is consistent with the quantum‐confined subbands of a 2DEG. The quantitative relationship between the surface and bulk electronic structures developed in this work provides a guide for precise engineering of the oxygen‐vacancy‐induced 2DEG in SrTiO₃.

    

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