skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Unconventional Anomalous Hall Effect Driven by Self‐Intercalation in Covalent 2D Magnet Cr 2 Te 3
Abstract Covalent 2D magnets such as Cr2Te3, which feature self‐intercalated magnetic cations located between monolayers of transition‐metal dichalcogenide material, offer a unique platform for controlling magnetic order and spin texture, enabling new potential applications for spintronic devices. Here, it is demonstrated that the unconventional anomalous Hall effect (AHE) in Cr2Te3, characterized by additional humps and dips near the coercive field in AHE hysteresis, originates from an intrinsic mechanism dictated by the self‐intercalation. This mechanism is distinctly different from previously proposed mechanisms such as topological Hall effect, or two‐channel AHE arising from spatial inhomogeneities. Crucially, multiple Weyl‐like nodes emerge in the electronic band structure due to strong spin‐orbit coupling, whose positions relative to the Fermi level is sensitively modulated by the canting angles of the self‐intercalated Cr cations. These nodes contribute strongly to the Berry curvature and AHE conductivity. This component competes with the contribution from bands that are less affected by the self‐intercalation, resulting in a sign change in AHE with temperature and the emergence of additional humps and dips. The findings provide compelling evidence for the intrinsic origin of the unconventional AHE in Cr2Te3 and further establish self‐intercalation as a control knob for engineering AHE in complex magnets.  more » « less
Award ID(s):
2242796
PAR ID:
10640988
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  more » ;  ;  ;  ;  ;  ;   « less
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Science
Volume:
12
Issue:
2
ISSN:
2198-3844
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract Room‐temperature magnetic skyrmion materials exhibiting robust topological Hall effect (THE) are crucial for novel nano‐spintronic devices. However, such skyrmion‐hosting materials are rare in nature. In this study, a self‐intercalated transition metal dichalcogenide Cr1+xTe2with a layered crystal structure that hosts room‐temperature skyrmions and exhibits large THE is reported. By tuning the self‐intercalate concentration, a monotonic control of Curie temperature from 169 to 333 K and a magnetic anisotropy transition from out‐of‐plane to the in‐plane configuration are achieved. Based on the intercalation engineering, room‐temperature skyrmions are successfully created in Cr1.53Te2with a Curie temperature of 295 K and a relatively weak perpendicular magnetic anisotropy. Remarkably, a skyrmion‐induced topological Hall resistivity as large as ≈106 nΩ cm is observed at 290 K. Moreover, a sign reversal of THE is also found at low temperatures, which can be ascribed to other topological spin textures having an opposite topological charge to that of the skyrmions. Therefore, chromium telluride can be a new paradigm of the skyrmion material family with promising prospects for future device applications. 
    more » « less
  2. Abstract Being able to electrically manipulate the magnetic properties in recently discovered van der Waals ferromagnets is essential for their integration in future spintronics devices. Here, the magnetization of a semiconducting 2D ferromagnet, i.e., Cr2Ge2Te6, is studied using the anomalous Hall effect in Cr2Ge2Te6/tantalum heterostructures. The thinner the flakes, hysteresis and remanence in the magnetization loop with out‐of‐plane magnetic fields become more prominent. In order to manipulate the magnetization in such thin flakes, a combination of an in‐plane magnetic field and a charge current flowing through Ta—a heavy metal exhibiting giant spin Hall effect—is used. In the presence of in‐plane fields of 20 mT, charge current densities as low as 5 × 105A cm–2are sufficient to switch the out‐of‐plane magnetization of Cr2Ge2Te6. This finding highlights that current densities required for spin‐orbit torque switching of Cr2Ge2Te6are about two orders of magnitude lower than those required for switching nonlayered metallic ferromagnets such as CoFeB. The results presented here show the potential of 2D ferromagnets for low‐power memory and logic applications. 
    more » « less
  3. Abstract Intercalation has become a powerful approach to tune the intrinsic properties and introduce novel phenomena in layered materials. Intercalating van der Waals (vdW) magnetic materials is a promising route to engineer the low-dimensional magnetism. Recently, metal thiophosphates,MPX3, has been widely studied because their magnetic orders are highly tunable and persist down to the two-dimensional limit. In this work, we used electrochemical technique to intercalate Li into NiPS3single crystals and found the emergence of ferrimagnetism at low temperature in Li-intercalated NiPS3. Such tuning of magnetic properties highlights the effectiveness of intercalation, providing a novel strategy to manipulate the magnetism in vdW magnets. 
    more » « less
  4. Abstract Three-dimensional (3D) compensated MnBi2Te4is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings bring to light a topological anomalous Hall response that can be found in non-collinear ferromagnetic, and antiferromagnetic phases. 
    more » « less
  5. Abstract Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr 2 Te 3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr 2 Te 3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr 2 Te 3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic layers/domains. The versatile interface tunability of Berry curvature in Cr 2 Te 3 thin films offers new opportunities for topological electronics. 
    more » « less