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This content will become publicly available on March 1, 2026

Title: Proximity-induced antisymmetric humps in Hall resistivity in Fe-doped monolayer WSe2
Non-collinear spin texture has attracted great attention since it provides an important probe of the interaction between electron and topological spin textures. While it has been widely reported in chiral magnets, oxide heterostructures, and hybrid systems such as ferromagnet/heavy metal and ferromagnet/topological insulators, the study of non-collinear spin texture in two-dimensional (2D) van der Waals (vdW) dilute magnetic semiconductor (DMS) monolayers is relatively lacking, hindering the understanding at the atomically thin scale. Here, we probe the temperature-dependent antisymmetric humps in Hall resistivity by utilizing the proximity coupling of Fe-doped monolayer WSe2 (Fe:WSe2) synthesized using chemical vapor deposition on a Pt Hall bar. Multiple characterization methods were employed to demonstrate that Fe atoms substitutionally replace W atoms, making a 2D vdW DMS at room temperature. Distinct from the intrinsic anomalous Hall effect, we found the transverse Hall resistivity of Fe:WSe2 displaying two additional antisymmetric peak features in the temperature-dependent measurements. These peaks are attributed to the magnetic features at the Fe:WSe2 and Pt interface. Our work shows that a DMS synthesized from 2D vdW transition metal dichalcogenides is promising for realizing magnetic and spintronic applications.  more » « less
Award ID(s):
2129879
PAR ID:
10645899
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Publisher / Repository:
Applied Physics Letters
Date Published:
Journal Name:
Applied Physics Letters
Volume:
126
Issue:
10
ISSN:
0003-6951
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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