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Title: 2 kV Al 0.64 Ga 0.36 N-channel high electron mobility transistors with passivation and field plates
Abstract High voltage (∼2 kV) Al0.64Ga0.36N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm2). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si3N4surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress.  more » « less
Award ID(s):
2328137
PAR ID:
10647766
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
IOP
Date Published:
Journal Name:
Applied Physics Express
Volume:
18
Issue:
1
ISSN:
1882-0778
Page Range / eLocation ID:
016504
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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