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We present a method of fabricating uniform, large area indium oxysulfide (InOxSy) films using a vacuum-free continuous liquid metal printing method (CLMP) and sulfurization process for high-performance multi-wavelength photodetection. CLMP enables rapid printing of wide area (>10 cm2/s) metal oxide films of single nm-scale thickness at process temperatures just above 150 °C, which can be partially converted to metal oxy-chalcogenide thin films at back-end-of line (BEOL) process temperatures. Phototransistors fabricated from 16 nm-thick InOxSy achieved responsivities as high as 280 A/W and respond to wavelengths as long as 630 nm, enabling both classification of multiple wavelengths and readout of intensity assisted by machine learning models.
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This content will become publicly available on June 22, 2026
Machine Learning-Assisted Multi-Wavelength Perception Enabled by Ultrathin, Large-Area Printed Indium Oxysulfide Phototransistors
We present a method of fabricating uniform, large area indium oxysulfide (InOxSy) films using a vacuum-free continuous liquid metal printing method (CLMP) and sulfurization process for high-performance multi-wavelength photodetection. CLMP enables rapid printing of wide area (>10 cm2/s) metal oxide films of single nmscale thickness at process temperatures just above 150∘C, which can be partially converted to metal oxy-chalcogenide thin films at back-end-of line (BEOL) process temperatures. Phototransistors fabricated from 16 nm-thick InOxSy achieved responsivities as high as 280 A/W and respond to wavelengths as long as 630 nm, enabling both classification of multiple wavelengths and readout of intensity assisted by machine learning models.
more »
« less
- PAR ID:
- 10652390
- Publisher / Repository:
- IEEE
- Date Published:
- Page Range / eLocation ID:
- 1 to 2
- Subject(s) / Keyword(s):
- Liquid Metals, Phototransistors, machine-learning
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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