Abstract A measurement of off-shell Higgs boson production in the decay channel is presented. The measurement uses 140 fb−1of proton–proton collisions at TeV collected by the ATLAS detector at the Large Hadron Collider and supersedes the previous result in this decay channel using the same dataset. The data analysis is performed using a neural simulation-based inference method, which builds per-event likelihood ratios using neural networks. The observed (expected) off-shell Higgs boson production signal strength in the decay channel at 68% CL is ( ). The evidence for off-shell Higgs boson production using the decay channel has an observed (expected) significance of 2.5σ(1.3σ). The expected result represents a significant improvement relative to that of the previous analysis of the same dataset, which obtained an expected significance of 0.5σ. When combined with the most recent ATLAS measurement in the decay channel, the evidence for off-shell Higgs boson production has an observed (expected) significance of 3.7σ(2.4σ). The off-shell measurements are combined with the measurement of on-shell Higgs boson production to obtain constraints on the Higgs boson total width. The observed (expected) value of the Higgs boson width at 68% CL is ( ) MeV.
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This content will become publicly available on December 24, 2026
Superparamagnetic and stochastic-write magnetic tunnel junctions for high-speed true random number generation in advanced computing
Abstract We review two magnetic tunnel junction (MTJ) approaches for compact, low-power, CMOS-integrated true random number generation (TRNG). The first employs passive-read, easy-plane superparamagnetic MTJs (sMTJs) that generate thermal-fluctuation-driven bitstreams at 0.5–1 Gb s−1per device. The second uses MTJs with magnetically stable free layers, operated with stochastic write pulses to achieve switching probabilities of about 0.5 (i.e. write error rates of ), achieving Gb s−1per device; we refer to these as stochastic-write MTJs (SW-MTJs). Randomness from both approaches has been validated using the NIST SP 800-22r1a test suites. sMTJ approach uses a read-only cell with low power and can be compatible with most advanced CMOS nodes, while SW-MTJs leverage standard CMOS MTJ process flows, enabling co-integration with embedded spin-transfer torque magnetic random access memory. Both approaches can achieve deep sub-0.01 µm2MTJ footprints and offer orders-of-magnitude better energy efficiency than CPU/GPU-based generators, enabling placement near logic for high-throughput random bitstreams for probabilistic computing, statistical modeling, and cryptography. In terms of performance, sMTJs generally suit applications requiring very high data-rate random bits near logic processors, such as probabilistic computing or large-scale statistical modeling. Whereas SW-MTJs are attractive option for edge-oriented microcontrollers, providing entropy sources for computing or cryptographic enhancement. We highlight the strengths, limitations, and integration challenges of each approach, emphasizing the need to reduce device-to-device variability in sMTJs—particularly by mitigating magnetostriction-induced in-plane anisotropy—and to improve temporal stability in SW-MTJs for robust, large-scale deployment.
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- Award ID(s):
- 2105114
- PAR ID:
- 10656760
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Physics D: Applied Physics
- Volume:
- 59
- Issue:
- 1
- ISSN:
- 0022-3727
- Page Range / eLocation ID:
- 013002
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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