Record-High Pr (2Pr>40uC/cm2) in 3 nm (Physical) Ferroelectric HZO Annealed at 450C: High-T (85 °C) Electrical Cycling and Oxygen Vacancy Engineering
- Award ID(s):
- 2346953
- PAR ID:
- 10663201
- Publisher / Repository:
- IEEE
- Date Published:
- Page Range / eLocation ID:
- 1 to 3
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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