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(a) 3D visualization of a SmA divot measured by optical profilometry. (b) Polarized optical microscopy image showing the OS pattern between crossed polarizers, overlaid by the parameters used in our model. (c) Side view sketch showing the different parameters in our model.

 

Disclination lines play a key role in many physical processes, from the fracture of materials to the formation of the early universe. Achieving versatile control over disclinations is key to developing novel electro-optical devices, programmable origami, directed colloidal assembly, and controlling active matter. Here, we introduce a theoretical framework to tailor three-dimensional disclination architecture in nematic liquid crystals experimentally. We produce quantitative predictions for the connectivity and shape of disclination lines found in nematics confined between two thinly spaced glass substrates with strong patterned planar anchoring. By drawing an analogy between nematic liquid crystals and magnetostatics, we find that i) disclination lines connect defects with the same topological charge on opposite surfaces and ii) disclination lines are attracted to regions of the highest twist. Using polarized light to pattern the in-plane alignment of liquid crystal molecules, we test these predictions experimentally and identify critical parameters that tune the disclination lines’ curvature. We verify our predictions with computer simulations and find nondimensional parameters enabling us to match experiments and simulations at different length scales. Our work provides a powerful method to understand and practically control defect lines in nematic liquid crystals.

 

A wedge cell made of homeotropically treated glass plates is filled with a chirally doped nematic liquid crystal. When a sufficiently large magnetic field is applied in the cell plane, a bend-like distortion occurs above a Fréedericksz threshold field H th . H th is reduced from the achiral case because of a field-induced bend distortion that facilitates a chiral twist distortion. Measurements of H th vs sample thickness are reported and compared favorably with a theoretical model presented herein. A further theoretical comparison is made between H th and the electric-field-induced transition in a geometry, exhibiting a 2π azimuthal degeneracy. The results may have technological implications in, for example, in-plane switching devices.