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Creators/Authors contains: "Alijabbari, Naser"

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  1. ; ; ; ; ; ; ; (, 2018 IEEE MTT-S International Microwave Symposium (IMS))
    An integrated frequency quadrupler operating at 160 GHz, producing 100 mW of output power, and achieving peak efficiency of 25.5% is described. The quadrupler design is based on prior art and consists of GaAs Schottky diodes with epitaxy transferred to a micromachined silicon carrier forming a heterogeneously-integrated chip. A newly-developed fabrication process that eliminates high temperature annealing and utilizes SU-8 for adhesive bonding was employed to realize the circuit. The new process improves device yield and reliability compared to previous implementations. 
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