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Abstract Probabilistic inference in data-driven models is promising for predicting outputs and associated confidence levels, alleviating risks arising from overconfidence. However, implementing complex computations with minimal devices still remains challenging. Here, utilizing a heterojunction of p- and n-type semiconductors coupled with separate floating-gate configuration, a Gaussian-like memory transistor is proposed, where a programmable Gaussian-like current-voltage response is achieved within a single device. A separate floating-gate structure allows for exquisite control of the Gaussian-like current output to a significant extent through simple programming, with an over 10000 s retention performance and mechanical flexibility. This enables physical evaluation of complex distribution functions with the simplified circuit design and higher parallelism. Successful implementation for localization and obstacle avoidance tasks is demonstrated using Gaussian-like curves produced from Gaussian-like memory transistor. With its ultralow-power consumption, simplified design, and programmable Gaussian-like outputs, our 3-terminal Gaussian-like memory transistor holds potential as a hardware platform for probabilistic inference computing. 

Abstract Physically transient forms of electronics enable unique classes of technologies, ranging from biomedical implants that disappear through processes of bioresorption after serving a clinical need to internet-of-things devices that harmlessly dissolve into the environment following a relevant period of use. Here, we develop a sustainable manufacturing pathway, based on ultrafast pulsed laser ablation, that can support high-volume, cost-effective manipulation of a diverse collection of organic and inorganic materials, each designed to degrade by hydrolysis or enzymatic activity, into patterned, multi-layered architectures with high resolution and accurate overlay registration. The technology can operate in patterning, thinning and/or cutting modes with (ultra)thin eco/bioresorbable materials of different types of semiconductors, dielectrics, and conductors on flexible substrates. Component-level demonstrations span passive and active devices, including diodes and field-effect transistors. Patterning these devices into interconnected layouts yields functional systems, as illustrated in examples that range from wireless implants as monitors of neural and cardiac activity, to thermal probes of microvascular flow, and multi-electrode arrays for biopotential sensing. These advances create important processing options for eco/bioresorbable materials and associated electronic systems, with immediate applicability across nearly all types of bioelectronic studies. 

Abstract 2D magnetic materials hold promise for quantum and spintronic applications. 2D antiferromagnetic materials are of particular interest due to their relative insensitivity to external magnetic fields and higher switching speeds compared to 2D ferromagnets. However, their lack of macroscopic magnetization impedes detection and control of antiferromagnetic order, thus motivating magneto‐electrical measurements for these purposes. Additionally, many 2D magnetic materials are ambient‐reactive and electrically insulating or highly resistive below their magnetic ordering temperatures, which imposes severe constraints on electronic device fabrication and characterization. Herein, these issues are overcome via a fabrication protocol that achieves electrically conductive devices from the ambient‐reactive 2D antiferromagnetic semiconductor NiI₂. The resulting gate‐tunable transistors show band‐like electronic transport below the antiferromagnetic and multiferroic transition temperatures of NiI₂, revealing a Hall mobility of 15 cm² V⁻¹ s⁻¹at 1.7 K. These devices also allow direct electrical probing of the thickness‐dependent multiferroic phase transition temperature of NiI₂from 59 K (bulk) to 28 K (monolayer).