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Epitaxial growth of complex oxides on large-area wafers, such as sapphire and silicon, represents a key step toward scalable oxide device production. Solid phase epitaxy allows the synthesis of γ-Al2O3 on α-Al2O3 and provides a template with a matched lattice constant and appropriate cubic symmetry for subsequent heteroepitaxial growth of perovskite complex oxides. Nb-doped SrTiO3 thin films were deposited epitaxially on (111)-oriented γ-Al2O3 intermediate layers on (0001) c-axis-oriented sapphire α-Al2O3 crystals using pulsed laser deposition. The Nb:SrTiO3 thin films with a thickness of 53 nm, grown at 700 °C on γ-Al2O3, reached fully relaxed lattice parameters and were epitaxially oriented with respect to the substrate. Nb:SrTiO3 layers deposited using identical deposition conditions directly on α-Al2O3, without the γ-Al2O3 intermediate layer, were polycrystalline. The sheet conductivity of Nb:SrTiO3 grown on γ-Al2O3/α-Al2O3 is more than ten times higher than that of Nb:SrTiO3 grown directly on α-Al2O3 without the γ-Al2O3 layer. The results point to new directions for the integration of (111)-oriented pseudocubic perovskite complex oxides and the integration of epitaxial complex oxides over larger areas using α-Al2O3 single-crystal substrates. 

Recovered microbial community structure is known to be influenced by sample storage conditions and nucleic acid extraction methods, and the impact varies by sample type. Peat soils store a large portion of soil carbon and their microbiomes mediate climate feedbacks. Here, we tested three storage conditions and five extraction protocols on peat soils from three physicochemically distinct habitats in Stordalen Mire, Sweden, revealing significant methodological impacts on microbial (here, meaning bacteria and archaea) community structure. Initial preservation method impacted alpha but not beta diversity, with in-field storage in LifeGuard buffer yielding roughly two-thirds the richness of in-field flash-freezing or transport from the field on ice (all samples were stored at −80 °C after return from the field). Nucleic acid extraction method impacted both alpha and beta diversity; one method (the PowerSoil Total RNA Isolation kit with DNA Elution Accessory kit) diverged from the others (PowerMax Soil DNA Isolation kit-High Humic Acid Protocol, and three variations of a modifiedPowerMax Soil DNA/RNA isolation kit), capturing more diverse microbial taxa, with divergent community structures. Although habitat and sample depth still consistently dominated community variation, method-based biases in microbiome recovery for these climatologically-relevant soils are significant, and underscore the importance of methodological consistency for accurate inter-study comparisons, long-term monitoring, and consistent ecological interpretations. 

ABSTRACT Terahertz resonances embedded in crystalline heterostructures could close a spectral gap between conventional electronics and photonics while opening new windows on phenomena in non‐equilibrium lattice dynamics. We show that femtosecond optical screening of the depolarization field in epitaxial PbTiO₃/SrTiO₃superlattices launches a collective polar mode that oscillates near 1 THz and coherently spans the entire mini‐Brillouin zone. Wave‐vector‐resolved pump–probe X‐ray diffraction resolves a nearly dispersion‐less oscillation at 0.87 and 0.94 THz at the zone boundary and zone center, respectively, persisting for ∼2.5 ps, corresponding to a weakly damped resonance. Dynamical phase‐field simulations reveal the origin of the mode to mesoscopic rotation of closure‐domain textures during the photoexcited transition from an unscreened to a screened electrostatic state. Varying the PbTiO₃and SrTiO₃ratio tunes the mode frequency continuously from 0.9 to 1.4 THz, providing a quantitative design rule for frequency‐selectable THz oscillators in ferroelectric heterostructures. By coupling nanoscale polarization reconfiguration to long‐wavelength coherent dynamics, this work establishes depolarization‐field engineering to topology‐driven THz functionality and expanding the landscape of collective lattice dynamics. 

Amorphous BaTiO3 layers deposited on SrTiO3 (001) substrates at room temperature were subsequently crystallized using solid phase epitaxy (SPE). Heating an initially amorphous BaTiO3 layer in air at 650 °C for 3 h resulted in crystallization with components in two distinct crystallographic orientation relationships with respect to the substrate. Part of the volume of the BaTiO3 layer crystallized in a cube-on-cube relationship with the substrate. Other volumes crystallized in four variants of a 70.5° rotation about ⟨110⟩, resulting in a ⟨221⟩ surface normal in each case. Each of these four variants forms a Σ = 3 coincident site lattice with respect to the SrTiO3 substrate and the cube-on-cube oriented BaTiO3. Heating for the same duration and temperature in a reducing gas atmosphere resulted in the formation of polycrystalline BaTiO3 with no preferred crystallographic orientation. The dependence on the gas atmosphere indicates that it may be possible to tune the annealing time, temperature, and atmosphere to produce a single crystalline BTO on STO by SPE or produce a desired distribution of orientations. 

ScAlMgO4 (SAM) is a promising substrate material for group III-nitride semiconductors. SAM has a lower lattice mismatch with III-nitride materials compared to conventionally used sapphire (Al2O3) and silicon substrates. Bulk SAM substrate has the issues of high cost and lack of large area substrates. Utilizing solid-phase epitaxy to transform an amorphous SAM on a sapphire substrate into a crystalline form is a cost-efficient and scalable approach. Amorphous SAM layers were deposited on 0001-oriented Al2O3 by sputtering and crystallized by annealing at a temperature greater than 850 °C. Annealing under suboptimal annealing conditions results in a larger volume fraction of a competing spinel phase (MgAl2O4) exhibiting themselves as crystal facets on the subsequently grown InGaN layers during MOCVD growth. InGaN on SAM layers demonstrated both a higher intensity and emission redshift compared to the co-loaded InGaN on GaN on sapphire samples, providing a promising prospect for achieving efficient longer-wavelength emitters.