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Abstract Valleytronics is a rapidly advancing field that explores the use of the valley degree of freedom in electronic systems to encode and process information. It relies on electronic states with spin–valley locking, first predicted and observed in monolayer transition metal dichalcogenides like MoS₂. However, very few bulk materials have been reported to host spin–valley locked electronic states. In this work, we present experimental evidence for a predicted, unique spin–valley locked electronic state generated by the Bi zig-zag chains in the layered compound BaMnBi₂. We observed remarkable quantum transport properties in this material, including stacked quantum Hall effect (QHE) and nonlinear Hall effect (NLHE). From the analysis of the QHE, we identified a spin–valley degeneracy of 4, while the NLHE provides supporting evidence for the anticipated valley-contrasted Berry curvature—a typical signature of a spin–valley locked state. This spin–valley locked state contrasts with that observed in the sister compound BaMnSb₂, where the degeneracy is 2. This difference arises from significant variations in their orthorhombic structures and spin-orbital coupling. These findings not only set up a new platform for exploring coupled spin–valley physics in bulk materials but also underscores its potential for valleytronic device applications. 

This study investigates the electronic structure of the kagome metal YbTi3Bi4 using high-field torque magnetometry. The torque signal measured at a maximum field of 41.5 T reveals clear de Haas–van Alphen (dHvA) oscillations with a major frequency peak at Fδ ∼ 130 T. By rotating the sample at various tilt angles θ, we observed that Fδ exhibits a nearly 1/cosθ dependence, indicating the presence of a quasi-two-dimensional (2D) Fermi surface (FS) in YbTi3Bi4. This argument is further supported by the detection of a forward-leaning, sawtoothlike waveform in the dHvA effect, a hallmark of 2D FS characteristics. Notably, we identified two high-frequency peaks near Fχ ∼ 1900 T and Fλ ∼ 5600 T; however, these peaks quickly disappear at θ greater than 21◦. To better understand experimental observations, we computed the electronic band structure and FS using ab initio density-functional theory (DFT). The electronic bands reveal the presence of several Dirac points, flat bands, and van Hove singularities near the Fermi level. Five bands cross the Fermi level and contribute to the FS of this material. The FS comprises cylindrical sheets, with theoretical frequencies from the FS pockets aligning well with the experimental dHvA frequencies. Several FS parameters characterizing Fδ were determined by analyzing the temperature and field dependence of the dHvA oscillations using the Lifshitz-Kosevich theory. The detailed electronic properties presented in this work provide critical insights into the electronic structure of YbTi3Bi4 and other titanium-based kagome compounds. 

Abstract The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes. This anomaly is a determining factor in the fundamental origin of the topological state in InAs/GaSb. Here, the coexistence of electrons and holes in InAs/GaSb is tied to the chemical sharpness of the interface. Magnetotransport, in samples of Mn‐doped InAs/GaSb cleaved from wafers grown at a spatially inhomogeneous substrate temperature, is studied. It is reported that the observation of quantum oscillations and a quantized Hall effect whose behavior, exhibiting coexisting electrons and holes, is tuned by this spatial nonuniformity. Through transmission electron microscopy measurements, it is additionally found that samples that host this co‐existence exhibit a chemical intermixing between group III and group V atoms that extends over a larger thickness about the interface. The issue of intermixing at the interface is systematically overlooked in electronic transport studies of topological InAs/GaSb. These findings address this gap in knowledge and shed important light on the origin of the anomalous behavior of quantum oscillations seen in this 2D topological insulator. 

This study investigates the electronic structure of the vanadium-based kagome metal YV6Sn6 using magnetoresistance (MR) and torque magnetometry. The MR exhibits a nearly linear, non-saturating behavior, increasing by up to 55% at 35 T but shows no evidence of Shubnikov–de Haas oscillations. In contrast, the torque signal, measured up to 41.5 T, reveals clear de Haas–van Alphen (dHvA) oscillations over a wide frequency range, from a low frequency of Fα ∼20 T to high frequencies between 8 and 10 kT. Angular and temperature-dependent dHvA measurements were performed to probe the Fermi surface parameters of YV6Sn6. The dHvA frequencies display weak angular dependence, and the effective mass, determined by fitting the temperature-dependent data to the Lifshitz–Kosevich formula, is 0.097 mo, where mo represents the free electron mass. To complement the experimental findings, we computed the electronic band structure and Fermi surface using density functional theory. The calculations reveal several notable features, including multiple Dirac points near the Fermi level, flatbands, and Van Hove singularities. Two bands cross the Fermi level, contributing to the Fermi surface, with theoretical frequencies matching well with the observed dHvA frequencies. These combined experimental and theoretical insights enhance our understanding of the electronic structure of YV6Sn6 and provide a valuable framework for studying other vanadium- and titanium-based kagome materials. 

This work presents the evolution of the electronic properties of kagome superconductor CsV3Sb5 under pressure. The magnetoresistance under high fields of 43 T showed clear Shubnikov–de Haas (SdH) oscillations with multiple frequencies up to 2000 T. With the application of pressure, we observed a sudden change in SdH oscillations with the disappearance of the high-frequency signal near the critical pressure Pc1 ∼ 0.7 GPa. We argue that this change could be due to a reconstruction of the Fermi surface (FS) in CsV3Sb5. To interpret our experimental data, we computed the electronic band structures and FS of CsV3Sb5 using ab initio density functional theory. Our results indicate that both the electronic bands and FS of CsV3Sb5 are highly sensitive to external pressure. The deformation of FS pockets with increasing pressure qualitatively explains our experimental observations. The pressure-driven FS instability in CsV3Sb5 may induce changes in its electronic states, such as superconductivity, charge density wave, nontrivial topology, and more. Therefore, these results are invaluable for gaining insights into these electronic states in CsV3Sb5, as well as in other kagome materials.