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Group IV alloy nanocrystals (NCs) are a class of direct energy gap semiconductors that show high elemental abundance, low to non-toxicity, and composition-tunable absorption and emission properties. These properties have distinguished Ge1-xSnx NCs as an intriguing material for near-infrared (IR) optical studies. Achieving a material with efficient visible emission requires a modified class of Group IV alloys and the computational studies suggest that this can be achieved with Ge1-x-ySiySnx NCs. Herein, we report a colloidal strategy for the synthesis of bulk-like (10.3 ± 2.5 – 25.5 ± 5.3 nm) and quantum-confined (3.2 ± 0.6 – 4.2 ± 1.1 nm) Ge1-x-ySiySnx alloys that show strong size confinement effects and composition-tunable visible to near IR absorption and emission properties. This synthesis produces a homogeneous alloy with diamond cubic Ge structure and tunable Si (0.9 – 16.1%) and Sn (1.8 – 14.9%) compositions, exceeding the equilibrium solubility of Sn (<1%) in crystalline Si and Ge. Raman spectra of Ge1-x-ySiySnx alloys show a prominent redshift of the Ge-Ge peak and the emergence of a Ge-Si peak with increasing Si/Sn, suggesting the growth of homogeneous alloys. The smaller Ge1-x-ySiySnx NCs exhibit absorption onsets from 1.21 to 1.94 eV for x = 1.8 – 6.8% and y = 0.9 – 16.1% compositions, which are blueshifted from those reported for Ge1-x-ySiySnx bulk alloy films and Ge1-xSnx alloy NCs, indicating the influence of Si incorporation and strong size confinement effects. Solid-state photoluminescence (PL) spectra reveal core-related PL maxima from 1.77 – 1.97 eV in agreement with absorption onsets, consistent with the energy gaps calculated for ~3–4 nm alloy NCs. With facile low-temperature solution synthesis and direct control over physical properties, this methodology presents a noteworthy advancement in the synthesis of bulk-like and quantum-confined Ge1-x-ySiySnx alloys as versatile materials for future optical and electronic studies. 

In this study, we use the EPIC-I I (exposure, persuasion, identification, commitment, and implementation) framework as a lens for viewing instructor perceptions of including diversity, equity, and inclusion (DEI) activities in engineering and computer science undergraduate courses. The results provided evidence of three findings: (a) evidence existed of faculty participation at all levels of EPIC-I, (b) in moving through the EPIC-I framework, the evidence became scanter, and (c) although both groups were small, approximately equal numbers of participants were openly negative as were actively implementing additional DEI supporting activities in their classes. Implications and future work are discussed. 

Size-confined Si nanorods (NRs) have gained notable interest because of their tunable photophysical properties that make them attractive for optoelectronic, charge storage, and sensor technologies. However, established routes for fabrication of Si NRs use well-defined substrates and/or nanoscopic seeds as promoters that cannot be easily removed, hindering the investigation of their true potential and physical properties. Herein, we report a facile, one-step route for the fabrication of Si NRs via thermal disproportionation of hydrogen silsesquioxane (HSQ) in the presence of a molecular tin precursor (SnCl4) at a substantially lower temperature (450 ºC) compared to those used in the synthesis of size-confined Si nanocrystals (>1000 ºC). The use of these precursors allows the facile isolation of phase pure Si NRs via HF etching and subsequent surface passivation with 1-dodecene via hydrosilylation. The diameters (7.7–16.5 nm) of the NRs can be controlled by varying the amount of SnCl4 (0.2–3.0%) introduced during the HSQ synthesis. Physical characterization of the NRs suggests that the diamond cubic structure is not affected by the SnCl4, HF etching, and hydrosilylation. Surface analysis of NRs indicates the presence of Si0 and Sin+ species, which can be attributed to core Si and surface Si species bonded to dodecane ligands, respectively, and a systematic variation of Si0: Si-C ratio with the NR diameter. The NRs show strong size confinement effects with solid-state absorption onsets (2.51–2.80 eV) and solution-state (Tauc) indirect energy gaps (2.54–2.70 eV) that can be tuned by varying the diameters (16.5–7.7 nm), respectively. Photoluminescence (PL) and time-resolved PL (TRPL) studies reveal size-dependent emission (1.95–2.20 eV) with short, nanosecond lifetimes across the visible spectrum which trend closely to absorption trends seen in solid-state absorption data. The facile synthesis developed for size-confined Si NRs with high crystallinity and tunable optical properties will promote their application in optoelectronic, charge storage, and sensing studies. 

Theβ-delayed neutron-emission probabilities of 28 exotic neutron-rich isotopes of Pm, Sm, Eu, and Gd were measured for the first time at RIKEN Nishina Center using the Advanced Implantation Detector Array (AIDA) and the BRIKEN neutron detector array. The existingβ-decay half-life (T_1/2) database was significantly increased toward more neutron-rich isotopes, and uncertainties for previously measured values were decreased. The new data not only constrain the theoretical predictions of half-lives andβ-delayed neutron-emission probabilities, but also allow for probing the mechanisms of formation of the high-mass wing of the rare-earth peak located atA≈ 160 in ther-process abundance distribution through astrophysical reaction network calculations. An uncertainty quantification of the calculated abundance patterns with the new data shows a reduction of the uncertainty in the rare-earth peak region. The newly introduced variance-based sensitivity analysis method offers valuable insight into the influence of important nuclear physics inputs on the calculated abundance patterns. The analysis has identified the half-lives of¹⁶⁸Sm and of several gadolinium isotopes as some of the key variables among the current experimental data to understand the remaining abundance uncertainty atA= 167–172.