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As various property studies continue to emerge on high entropy and entropy-stabilized ceramics, we seek a further understanding of the property changes across the phase boundary between “high-entropy” and “entropy-stabilized” phases. The thermal and mechanical properties of bulk ceramic entropy stabilized oxide composition Mg0.2Co0.2Ni0.2Cu0.2Zn0.2O are investigated across this critical transition temperature via the transient plane-source method, temperature-dependent x-ray diffraction, and nano-indentation. The thermal conductivity remains constant within uncertainty across the multi-to-single phase transition at a value of ≈2.5 W/mK, while the linear coefficient of thermal expansion increases nearly 24% from 10.8 to 14.1 × 10−6 K−1. Mechanical softening is also observed across the transition. 

Abstract Advancements in nanofabrication processes have propelled nonvolatile phase change materials (PCMs) beyond storage‐class applications. They are now making headway in fields such as photonic integrated circuits (PIC), free‐space optics, and plasmonics. This shift is owed to their distinct electrical, optical, and thermal properties between their different atomic structures, which can be reversibly switched through thermal stimuli. However, the reliability of PCM‐based optical components is not yet on par with that of storage‐class devices. This is in part due to the challenges in maintaining a uniform temperature distribution across the PCM volume during phase transformation, which is essential to mitigate stress and element segregation as the device size exceeds a few micrometers. Understanding thermal transport in PCM‐based devices is thus crucial as it dictates not only the durability but also the performance and power consumption of these devices. This article reviews recent advances in the development of PCM‐based photonic devices from a thermal transport perspective and explores potential avenues to enhance device reliability. The aim is to provide insights into how PCM‐based technologies can evolve beyond storage‐class applications, maintain their functionality, and achieve longer lifetimes. 

Abstract The epsilon‐near‐zero (ENZ) frequency regime of transparent conducting oxide materials is known to yield large enhancements in their optical nonlinearity and electro‐optic response. Here, Faraday rotation is investigated in Gd and In‐doped CdO films and it is found that the Verdet constant peaks at values >3 10⁵ deg T⁻¹ m⁻¹near the  ENZ frequency, which is tunable in the wavelength range 2 < λ< 10 µm by varying the doping concentration. These results are among the highest reported to date in the mid‐infrared spectral range and are in good agreement with the Drude model, which confirms that the magneto‐optic response of doped CdO derives from its free carriers. The combination of a tunable Verdet constant, low optical loss compared to other plasmonic materials, and the ability to deposit CdO on Si with no loss in performance make this material a promising platform for integrated magneto‐optic and magnetoplasmonic devices that operate across the mid‐infrared. 

Abstract Epitaxial (Ti_1−xMg_x)_0.25Al_0.75N(0001)/Al₂O₃(0001) layers are used as a model system to explore how Fermi‐level engineering facilitates structural stabilization of a host matrix despite the intentional introduction of local bonding instabilities that enhance the piezoelectric response. The destabilizing octahedral bonding preference of Ti dopants and the preferred 0.67 nitrogen‐to‐Mg ratio for Mg dopants deteriorate the wurtzite AlN matrix for both Ti‐rich (x< 0.2) and Mg‐rich (x≥ 0.9) alloys. Conversely,x= 0.5 leads to a stability peak with a minimum in the lattice constant ratioc/a, which is caused by a Fermi‐level shift into the bandgap and a trend toward nondirectional ionic bonding, leading to a maximum in the expected piezoelectric stress constante₃₃. The refractive index and the subgap absorption decrease withx, the optical bandgap increases, and the elastic constant along the hexagonal axisC₃₃= 270 ± 14 GPa remains composition independent, leading to an expected piezoelectric constantd₃₃= 6.4 pC N⁻¹atx= 0.5, which is 50% larger than for the pure AlN matrix. Thus, contrary to the typical anticorrelation between stability and electromechanical coupling, the (Ti_1−xMg_x)_0.25Al_0.75N system exhibits simultaneous maxima in the structural stability and the piezoelectric response atx= 0.5. 

Abstract A novel n‐type copolymer dopant polystyrene–poly(4‐vinyl‐N‐hexylpyridinium fluoride) (PSpF) with fluoride anions is designed and synthesized by reversible addition–fragmentation chain transfer (RAFT) polymerization. This is thought to be the first polymeric fluoride dopant. Electrical conductivity of 4.2 S cm^–1and high power factor of 67 µW m^–1K^–2are achieved for PSpF‐doped polymer films, with a corresponding decrease in thermal conductivity as the PSpF concentration is increased, giving the highest ZT of 0.1. An especially high electrical conductivity of 58 S cm^–1at 88 °C and outstanding thermal stability are recorded. Further, organic transistors of PSpF‐doped thin films exhibit high electron mobility and Hall mobility of 0.86 and 1.70 cm²V^–1s^–1, respectively. The results suggest that polystyrene–poly(vinylpyridinium) salt copolymers with fluoride anions are promising for high‐performance n‐type all‐polymer thermoelectrics. This work provides a new way to realize organic thermoelectrics with high conductivity relative to the Seebeck coefficient, high power factor, thermal stability, and broad processing window.