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Abstract We study the transport properties of mm-scale CVD graphene p-n junctions, which are formed in a single gated graphene field effect transistor configuration. Here, an electrical-stressing-voltage technique served to modify the electrostatic potential in the SiO₂/Si substrate and create the p-n junction. We examine the transport characteristics about the Dirac points that are localized in the perturbed and unperturbed regions in the graphene channel and note the quantitative differences in the Hall effect between the perturbed and unperturbed regions. The results also show that the longitudinal resistance is highly sensitive to the external magnetic field when the Hall bar device operates as a p-n junction. 

Abstract Two-dimensional electron systems subjected to high transverse magnetic fields can exhibit Fractional Quantum Hall Effects (FQHE). In the GaAs/AlGaAs 2D electron system, a double degeneracy of Landau levels due to electron-spin, is removed by a small Zeeman spin splitting,$$g \mu _B B$$ $g{\mu }_{B}B$, comparable to the correlation energy. Then, a change of the Zeeman splitting relative to the correlation energy can lead to a re-ordering between spin polarized, partially polarized, and unpolarized many body ground states at a constant filling factor. We show here that tuning the spin energy can produce fractionally quantized Hall effect transitions that include both a change in$$\nu$$ $\nu$for the$$R_{xx}$$ $R_{\mathrm{xx}}$minimum, e.g., from$$\nu = 11/7$$ $\nu =11/7$to$$\nu = 8/5$$ $\nu =8/5$, and a corresponding change in the$$R_{xy}$$ $R_{\mathrm{xy}}$, e.g., from$$R_{xy}/R_{K} = (11/7)^{-1}$$ $R_{\mathrm{xy}}/R_K={(11/7)}^{-1}$to$$R_{xy}/R_{K} = (8/5)^{-1}$$ $R_{\mathrm{xy}}/R_K={(8/5)}^{-1}$, with increasing tilt angle. Further, we exhibit a striking size dependence in the tilt angle interval for the vanishing of the$$\nu = 4/3$$ $\nu =4/3$and$$\nu = 7/5$$ $\nu =7/5$resistance minima, including “avoided crossing” type lineshape characteristics, and observable shifts of$$R_{xy}$$ $R_{\mathrm{xy}}$at the$$R_{xx}$$ $R_{\mathrm{xx}}$minima- the latter occurring for$$\nu = 4/3, 7/5$$ $\nu =4/3,7/5$and the 10/7. The results demonstrate both size dependence and the possibility, not just of competition between different spin polarized states at the same$$\nu$$ $\nu$and$$R_{xy}$$ $R_{\mathrm{xy}}$, but also the tilt- or Zeeman-energy-dependent- crossover between distinct FQHE associated with different Hall resistances. 

Abstract A metallic state with a vanishing activation gap, at a filling factor $$\nu = 8/5$$ ν = 8 / 5 in the untilted specimen with $$n= 2 \times 10^{11} cm^{-2}$$ n = 2 × 10 11 c m - 2 , and at $$\nu = 4/3$$ ν = 4 / 3 at $$n=1.2 \times 10^{11} cm^{-2}$$ n = 1.2 × 10 11 c m - 2 under a $$\theta = 66^{0}$$ θ = 66 0 tilted magnetic field, is examined through a microwave photo-excited transport study of the GaAs/AlGaAs 2 dimensional electron system (2DES). The results presented here suggest, remarkably, that at the possible degeneracy point of states with different spin polarization, where the 8/5 or 4/3 FQHE vanish, there occurs a peculiar marginal metallic state that differs qualitatively from a quantum Hall insulating state and the usual quantum Hall metallic state. Such a marginal metallic state occurs most prominently at $$\nu =8/5$$ ν = 8 / 5 , and at $$\nu =4/3$$ ν = 4 / 3 under tilt as mentioned above, over the interval $$1 \le \nu \le 2$$ 1 ≤ ν ≤ 2 , that also includes the $$\nu = 3/2$$ ν = 3 / 2 state, which appears perceptibly gapped in the first instance. 

ABSTRACT CVD graphene growth typically uses commercially available cold-rolled copper foils, which includes a rich topography with scratches, dents, pits, and peaks. The graphene grown on this topography, even after annealing the foil, tends to include and reflect these topographic features. Further, the transfer of such CVD graphene to a flat substrate using a polymer transfer method also introduces wrinkles. Here, we examine an electropolishing technique for reducing native foil defects, characterize the resulting foil surface, grow single-crystal graphene on the polished foil, and examine the quality of the graphene for such defects. 

ABSTRACT Graphene specimens produced by chemical vapor deposition usually show p-type characteristics and significant hysteresis in ambient conditions. Among many methods, current annealing appears to be a better way of cleaning the sample due to the possibility of in-situ annealing in the measurement setup. However, long-time current annealing could increase defects in the underlying substrate. Studying the hysteresis with different anneal currents in a graphene device is, therefore, a topic of interest. In this experimental work, we investigate electron/hole transport in a graphene sample in the form of a Hall bar device with a back gate, where the graphene was prepared using chemical vapor deposition on copper foils. We study the hysteresis before and after current annealing the sample by cooling down to a temperature of 35 Kfrom room temperature with a back-gate bias in a closed cycle refrigerator.