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The traditional von Neumann architecture limits the increase in computing efficiency and results in massive power consumption in modern computers due to the separation of storage and processing units. The novel neuromorphic computation system, an in-memory computing architecture with low power consumption, is aimed to break the bottleneck and meet the needs of the next generation of artificial intelligence (AI) systems. Thus, it is urgent to find a memory technology to implement the neuromorphic computing nanosystem. Nowadays, the silicon-based flash memory dominates non-volatile memory market, however, it is facing challenging issues to achieve the requirements of future data storage device development due to the drawbacks, such as scaling issue, relatively slow operation speed, and high voltage for program/erase operations. The emerging resistive random-access memory (RRAM) has prompted extensive research as its simple two-terminal structure, including top electrode (TE) layer, bottom electrode (BE) layer, and an intermediate resistive switching (RS) layer. It can utilize a temporary and reversible dielectric breakdown to cause the RS phenomenon between the high resistance state (HRS) and the low resistance state (LRS). RRAM is expected to outperform conventional memory device with the advantages, notably its low-voltage operation, short programming time, great cyclic stability, and good scalability.more »Among the materials for RS layer, indium gallium zinc oxide (IGZO) has shown attractive prospects in abundance and high atomic diffusion property of oxygen atoms, transparency. Additionally, its electrical properties can be easily modulated by controlling the stoichiometric ratio of indium and gallium as well as oxygen potential in the sputter gas. Moreover, since the IGZO can be applied to both the thin-film transistor (TFT) channel and RS layer, it has a great potential for fully integrated transparent electronics application. In this work, we proposed amorphous transparent IGZO-based RRAMs and investigated switching behaviors of the memory cells prepared with different top electrodes. First, ITO was choosing to serve as both TE and BE to achieve high transmittance. A multi-target magnetron sputtering system was employed to deposit all three layers (TE, RS, BE layers) on glass substrate. I-V characteristics were evaluated by a semiconductor parameter analyzer, and the bipolar RS feature of our RRAM devices was demonstrated by typical butterfly curves. The optical transmission analysis was carried out via a UV-Vis spectrometer and the average transmittance was around 80% out of entire devices in the visible-light wavelength range, implying high transparency. We adjusted the oxygen partial pressure during the sputtering of IGZO to optimize the property because the oxygen vacancy concentration governs the RS performance. Electrode selection is crucial and can impact the performance of the whole device. Thus, Cu TE was chosen for our second type of device because the diffusion of Cu ions can be beneficial for the formation of the conductive filament (CF). A ~5 nm SiO 2 barrier layer was employed between TE and RS layers to confine the diffusion of Cu into the RS layer. At the same time, this SiO 2 inserting layer can provide an additional interfacial series resistance in the device to lower the off current, consequently, improve the on/off ratio and whole performance. Finally, an oxygen affinity metal Ti was selected as the TE for our third type of device because the concentration of the oxygen atoms can be shifted towards the Ti electrode, which provides an oxygengettering activity near the Ti metal. This process may in turn lead to the formation of a sub-stoichiometric region in the neighboring oxide that is believed to be the origin of better performance. In conclusion, the transparent amorphous IGZO-based RRAMs were established. To tune the property of RS layer, the sputtering conditions of RS were varied. To investigate the influence of TE selections on switching performance of RRAMs, we integrated a set of TE materials, and a barrier layer on IGZO-based RRAM and compared the switch characteristics. Our encouraging results clearly demonstrate that IGZO is a promising material in RRAM applications and breaking the bottleneck of current memory technologies.« less

Biomimetic synaptic processes, which are imitated by functional memory devices in the computer industry, are a key focus of artificial intelligence (AI) research. It is critical to developing a memory technology that is compatible with Brain-Inspired Computing in order to eliminate the von Neumann bottleneck that restricts the efficiency of traditional computer designs. Due to restrictions such as high operation voltage, poor retention capacity, and high power consumption, silicon-based flash memory, which presently dominates the data storage devices market, is having difficulty meeting the requirements of future data storage device development. The developing resistive random-access memory (RRAM) has sparked intense investigation because of its simple two-terminal structure: two electrodes and a switching layer. RRAM has a resistive switching phenomenon which is a cycling behavior between the high resistance state and the low resistance state. This developing device type is projected to outperform traditional memory devices. Indium gallium zinc oxide (IGZO) has attracted great attention for the RRAM switching layer because of its high transparency and high atomic diffusion property of oxygen atoms. More importantly, by controlling the oxygen ratio in the sputter gas, its electrical properties can be easily tuned. The IGZO has been applied to the thin-film transistor (TFT),more »thus, it is very promising to integrate RRAM with TFT. In this work, we proposed IGZO-based RRAMs. ITO was chosen as the bottom electrode towards achieving a fully transparent memristor. And for the IGZO switching layer, we varied the O2/Ar ratio during the deposition to modify the oxygen vacancy of IGZO. Through the XPS measurement, we confirmed that the higher O2/Ar ratio can lower the oxygen vacancy concentration. We also chose ITO as the top electrode, for the comparison, two active metals copper and silver were tested for the top electrode materials. For our IGZO layer, the best ratio of O2/Ar is the middle value. And copper top electrode device has the most stable cycling switching and the silver one is perfect for large memory window, however, it encounters a stability issue. The optical transmission examination was performed using a UV-Vis spectrometer, and the average transmittance of the complete devices in the visible-light wavelength range was greater than 90%, indicating good transparency. 50nm, 100nm, and 150nm RS layers of IGZO RRAM were produced to explore the thickness dependency on the characteristics of the RS layer. Also, because the oxygen vacancy concentration influences the RS and RRAM performance, the oxygen partial pressure during IGZO sputtering was modified to maximize the property. Electrode selection is critical and can have a significant influence on the device's overall performance. As a result, Cu TE was chosen for our second type of device because Cu ion diffusion can aid in the development of conductive filaments (CF). Finally, between the TE and RS layers, a 5 nm SiO2 barrier layer was used to limit Cu penetration into the RS layer. Simultaneously, this SiO2 inserting layer can offer extra interfacial series resistance in the device, lowering the off current and, as a result, improving the on/off ratio and overall performance. In conclusion, transparent IGZO-based RRAMs have been created. The thickness of the RS layer and the sputtering conditions of the RS layer were modified to tailor the property of the RS layer. A series of TE materials and a barrier layer were incorporated into an IGZO-based RRAM and the performance was evaluated in order to design the TE material's diffusion capabilities to the RS layer and the BE. Our positive findings show that IGZO is a potential material for RRAM applications and overcoming the existing memory technology limitation.« less

Enhancing battery energy storage capability and reducing the cost per average energy capacity is urgent to satisfy the increasing energy demand in modern society. The lithium-sulfur (Li-S) battery is especially attractive because of its high theoretical specific energy (around 2600 W h kg-1), low cost, and low toxicity.1 Despite these advantages, the practical utilization of lithium-sulfur (Li-S) batteries to date has been hindered by a series of obstacles, including low active material loading, shuttle effects, and sluggish sulfur conversion kinetics.2 The traditional 2D planer thick electrode is considered as a general approach to enhance the mass loading of the Li-S battery.3 However, the longer diffusion length of lithium ions, which resulted in high tortuosity in the compact stacking thick electrode, decreases the penetration ability of the electrolyte into the entire cathode.4 Although an effort to induce catalysts in the cathode was made to promote sulfur conversion kinetic conditions, catalysts based on transition metals suffered from the low electronic conductivity, and some elements (i.e.: Co, Mn) may even absorb and restrict polysulfides for further reaction. 5 To mitigate the issues listed above, herein we propose a novel sulfur cathode design strategy enabled by additive manufacturing and oxidative chemical vapor deposition (oCVD).more »6,7 Specifically, the cathode is designed to have a hierarchal hollow structure via a stereolithography technique to increase sulfur usage. Microchannels are constructed on the tailored sulfur cathode to further fortify the wettability of the electrolyte. The as-printed cathode is then sintered at 700 °C in an N2 atmosphere in order to generate a carbon skeleton (i.e.: carbonization of resin) with intrinsic carbon defects. The intrinsic carbon defects are expected to create favorable sulfur conversion conditions with sufficient electronic conductivity. In this study, the oCVD technique is leveraged to produce a conformal coating layer to eliminate shuttle effects. Identified by scanning electron microscopy and energy-dispersive X-ray spectroscopy mapping characterizations, the oCVD PEDOT is not only covered on the surface of the cathode but also on the inner surface of the microchannels. High-resolution x-ray photoelectron spectroscopy analyses (C 1s and S 2p orbitals) between pristine and modified samples demonstrate that a high concentration of the defects has been produced on the sulfur matrix after sintering and posttreatment. In-operando XRD diffractograms show that the Li2S is generated in the oCVD PEDOT-coated sample during the charge and discharge process even with a high current density, confirming an eminent sulfur conversion kinetic condition. In addition, ICP-OES results of lithium metal anode at different states of charge (SoC) verify that the shuttle effects are excellently restricted by oCVD PEDOT. Overall, the high mass loading (> 5 mg cm-2) with an elevated sulfur utilization ratio, accelerated reaction kinetics and stabilized electrochemical process have been achieved on the sulfur cathode by implementing this innovative cathode design strategy. The results of this study demonstrate significant promises of employing pure sulfur powder with high electrochemical performance and suggest a pathway to the higher energy and power density battery. References: 1 Chen, Y. Adv Mater 33, e2003666. 2 Bhargav, A. Joule 4, 285-291. 3 Liu, S. Nano Energy 63, 103894. 4 Chu, T. Carbon Energy 3. 5 Li, Y. Matter 4, 1142-1188. 6 John P. Lock. Macromolecules 39, 4 (2006). 7 Zekoll, S. Energy & Environmental Science 11, 185-201.« less

All-solid-state batteries (ASSBs) have garnered increasing attention due to the enhanced safety, featuring nonflammable solid electrolytes as well as the potential to achieve high energy density. 1 The advancement of the ASSBs is expected to provide, arguably, the most straightforward path towards practical, high-energy, and rechargeable batteries based on metallic anodes. 1 However, the sluggish ion transmission at the cathode-electrolyte (solid/solid) interface would result in the high resistant at the contact and limit the practical implementation of these all solid-state materials in real world batteries. 2 Several methods were suggested to enhance the kinetic condition of the ion migration between the cathode and the solid electrolyte (SE). 3 A composite strategy that mixes active materials and SEs for the cathode is a general way to decrease the ion transmission barrier at the cathode-electrolyte interface. 3 The active material concentration in the cathode is reduced as much as the SE portion increases by which the energy density of the ASSB is restricted. In addition, the mixing approach generally accompanies lattice mismatches between the cathode active materials and the SE, thus providing only limited improvements, which is imputed by random contacts between the cathode active materials and the SE during the mixingmore »process. Implementing high-pressure for the electrode and electrolyte of ASSB in the assembling process has been verified is a but effective way to boost the ion transmission ability between the cathode active materials and the SE by decreasing the grain boundary impedance. Whereas the short-circuit of the battery would be induced by the mechanical deformation of the electrolyte under high pressure. 4 Herein, we demonstrate a novel way to address the ion transmission problem at the cathode-electrolyte interface in ASSBs. Starting from the cathode configuration, the finite element method (FEM) was employed to evaluate the current concentration and the distribution of the space charge layer at the cathode-electrolyte interface. Hierarchical three-dimensional (HTD) structures are found to have a higher Li + transfer number (t Li+ ), fewer free anions, and the weaker space-charge layer at the cathode-electrolyte interface in the resulting FEM simulation. To take advantage of the HTD structure, stereolithography is adopted as a manufacturing technique and single-crystalline Ni-rich (SCN) materials are selected as the active materials. Next, the manufactured HTD cathode is sintered at 600 °C in an N 2 atmosphere for the carbonization of the resin, which induces sufficient electronic conductivity for the cathode. Then, the gel-like Li 1.4 Al 0.4 Ti 1.6 (PO 4 ) 3 (LATP) precursor is synthesized and filled into the voids of the HTD structure cathode sufficiently. And the filled HTD structure cathodes are sintered at 900 °C to achieve the crystallization of the LATP gel. Scanning transmission electron microscopy (STEM) is used to unveil the morphology of the cathode-electrolyte interface between the sintered HTD cathode and the in-situ generated electrolyte (LATP). A transient phase has been found generated at the interface and matched with both lattices of the SCN and the SE, accelerating the transmission of the Li-ions, which is further verified by density functional theory calculations. In addition, Electron Energy Loss Spectroscopy demonstrates the preserved interface between HTD cathode and SEs. Atomic force microscopy is employed to measure the potential image of the cross-sectional interface by the peak force tapping mode. The average potential of modified samples is lower than the sample that mix SCN and SEs simply in the 2D planar structure, which confirms a weakened space charge layer by the enhanced contact capability as well as the ion transmission ability. To see if the demonstrated method is universally applicable, LiNi 0.8 Co 0.1 Mn 0.1 O 2 (NCM811) is selected as the cathode active material and manufactured in the same way as the SCN. The HTD cathode based on NCM811 exhibits higher electrochemical performance compared with the reference sample based on the 2D planar mixing-type cathode. We believe such a demonstrated universal strategy provides a new guideline to engineer the cathode/electrolyte interface by revolutionizing electrode structures that can be applicable to all-solid-state batteries. Figure 1. Schematic of comparing of traditional 2D planar cathode and HTD cathode in ASSB Tikekar, M. D. , et al. , Nature Energy (2016) 1 (9), 16114 Banerjee, A. , et al. , Chem Rev (2020) 120 (14), 6878 Chen, R. , et al. , Chem Rev (2020) 120 (14), 6820 Cheng, X. , et al. , Advanced Energy Materials (2018) 8 (7) Figure 1« less

Conventional lithium-ion batteries are unable to meet the increasing demands for high-energy storage systems, because of their limited theoretical capacity. 1 In recent years, intensive attention has been paid to enhancing battery energy storage capability to satisfy the increasing energy demand in modern society and reduce the average energy capacity cost. Among the candidates for next generation high energy storage systems, the lithium sulfur battery is especially attractive because of its high theoretical specific energy (around 2600 W h kg-1) and potential cost reduction. In addition, sulfur is a cost effective and environmentally friendly material due to its abundance and low-toxicity. 2 Despite all of these advantages, the practical application of lithium sulfur batteries to date has been hindered by a series of obstacles, including low active material loading, poor cycle life, and sluggish sulfur conversion kinetics. 3 Achieving high mass loading cathode in the traditional 2D planar thick electrode has been challenged. The high distorsion of the traditional planar thick electrodes for ion/electron transfer leads to the limited utilization of active materials and high resistance, which eventually results in restricted energy density and accelerated electrode failure. 4 Furthermore, of the electrolyte to pores in the cathode and utilization ratiomore »of active materials. Catalysts such as MnO 2 and Co dopants were employed to accelerate the sulfur conversion reaction during the charge and discharge process. 5 However, catalysts based on transition metals suffer from poor electronic conductivity. Other catalysts such as transition metal dopants are also limited due to the increased process complexities. . In addition, the severe shuttle effects in Li-S batteries may lead to fast failures of the battery. Constructing a protection layer on the separator for limiting the transmission of soluble polysulfides is considered an effective way to eliminate the shuttle phenomenon. However, the soluble sulfides still can largely dissolve around the cathode side causing the sluggish reaction condition for sulfur conversion. 5 To mitigate the issues above, herein we demonstrate a novel sulfur electrode design strategy enabled by additive manufacturing and oxidative vapor deposition (oCVD). Specifically, the electrode is strategically designed into a hierarchal hollow structure via stereolithography technique to increase sulfur usage. The active material concentration loaded to the battery cathode is controlled precisely during 3D printing by adjusting the number of printed layers. Owing to its freedom in geometry and structure, the suggested design is expected to improve the Li ions and electron transport rate considerably, and hence, the battery power density. The printed cathode is sintered at 700 °C at N 2 atmosphere to achieve carbonization of the cathode during which intrinsic carbon defects (e.g., pentagon carbon) as catalytic defect sites are in-situ generated on the cathode. The intrinsic carbon defects equipped with adequate electronic conductivity. The sintered 3D cathode is then transferred to the oCVD chamber for depositing a thin PEDOT layer as a protection layer to restrict dissolutions of sulfur compounds in the cathode. Density functional theory calculation reveals the electronic state variance between the structures with and without defects, the structure with defects demonstrates the higher kinetic condition for sulfur conversion. To further identify the favorable reaction dynamic process, the in-situ XRD is used to characterize the transformation between soluble and insoluble polysulfides, which is the main barrier in the charge and discharge process of Li-S batteries. The results show the oCVD coated 3D printed sulfur cathode exhibits a much higher kinetic process for sulfur conversion, which benefits from the highly tailored hierarchal hollow structure and the defects engineering on the cathode. Further, the oCVD coated 3D printed sulfur cathode also demonstrates higher stability during long cycling enabled by the oCVD PEDOT protection layer, which is verified by an absorption energy calculation of polysulfides at PEDOT. Such modeling and analysis help to elucidate the fundamental mechanisms that govern cathode performance and degradation in Li-S batteries. The current study also provides design strategies for the sulfur cathode as well as selection approaches to novel battery systems. References: Bhargav, A., (2020). Lithium-Sulfur Batteries: Attaining the Critical Metrics. Joule 4 , 285-291. Chung, S.-H., (2018). Progress on the Critical Parameters for Lithium–Sulfur Batteries to be Practically Viable. Advanced Functional Materials 28 , 1801188. Peng, H.-J.,(2017). Review on High-Loading and High-Energy Lithium–Sulfur Batteries. Advanced Energy Materials 7 , 1700260. Chu, T., (2021). 3D printing‐enabled advanced electrode architecture design. Carbon Energy 3 , 424-439. Shi, Z., (2021). Defect Engineering for Expediting Li–S Chemistry: Strategies, Mechanisms, and Perspectives. Advanced Energy Materials 11 . Figure 1« less

The major focus of artificial intelligence (AI) research is made on biomimetic synaptic processes that are mimicked by functional memory devices in the computer industry [1]. It is urgent to find a memory technology for suiting with Brain-Inspired Computing to break the von Neumann bottleneck which limits the efficiency of conventional computer architectures [2]. Silicon-based flash memory, which currently dominates the market for data storage devices, is facing challenging issues to meet the needs of future data storage device development due to the limitations, such as high-power consumption, high operation voltage, and low retention capacity [1]. The emerging resistive random-access memory (RRAM) has elicited intense research as its simple sandwiched structure, including top electrode (TE) layer, bottom electrode (BE) layer, and an intermediate resistive switching (RS) layer, can store data using RS phenomenon between the high resistance state (HRS) and the low resistance state (LRS). This class of emerging devices is expected to outperform conventional memory devices [3]. Specifically, the advantages of RRAM include low-voltage operation, short programming time, great cyclic stability, and good scalability [4]. Among the materials for RS layer, indium gallium zinc oxide (IGZO) has attracted attention because of its abundance and high atomic diffusion property ofmore »oxygen atoms, transparency, and its easily modulated electrical properties by controlling the stoichiometric ratio of indium and gallium as well as oxygen potential in the sputter gas [5, 6]. Moreover, since the IGZO can be applied to both the thin-film transistor (TFT) channel and RS layer, the IGZO-based fully integrated transparent electronics are very promising [5]. In this work, we proposed transparent IGZO-based RRAMs. First, we chose ITO to serve as both TE and BE to achieve high transmittance in the visible regime of light. All three layers (TE, RS, BE layers) were deposited using a multi-target magnetron sputtering system on glass substrates to demonstrate fully transparent oxide-based devices. I-V characteristics were evaluated by a semiconductor parameter analyzer, and our devices showed typical butterfly curves indicating the bipolar RS property. And the IGZO-based RRAM can survive more than 50 continuous sweeping cycles. The optical transmission analysis was carried out via an UV-Vis spectrometer and the average transmittance around 80% out of entire devices in the visible-light wavelength range, implying high transparency. To investigate the thickness dependence on the properties of RS layer, 50nm, 100nm and 150nm RS layer of IGZO RRAM were fabricated. Also, the oxygen partial pressure during the sputtering of IGZO was varied to optimize the property because the oxygen vacancy concentration governs the RS and RRAM performance. Electrode selection is crucial and can impact the performance of the whole device [7]. Thus, Cu TE was chosen for our second type of device because the diffusion of Cu ions can be beneficial for the formation the conductive filament (CF). Finally, a ~5 nm SiO2 barrier layer was employed between TE and RS layers to confine the diffusion of Cu into the RS layer. At the same time, this SiO2 inserting layer can provide an additional interfacial series resistance in the device to lower the off current, consequently, improve the on/off ratio and whole performance. In conclusion, the transparent IGZO-based RRAMs were established. To tune the property of RS layer, the thickness layer and sputtering conditions of RS were adjusted. In order to engineer the diffusion capability of the TE material to the RS layer and the BE, a set of TE materials and a barrier layer were integrated in IGZO-based RRAM and the performance was compared. Our encouraging results clearly demonstrate that IGZO is a promising material in RRAM applications and overcoming the bottleneck of current memory technologies.« less

The discovery of oxide electronics is of increasing importance today as one of the most promising new technologies and manufacturing processes for a variety of electronic and optoelectronic applications such as next-generation displays, batteries, solar cells, and photodetectors. The high potential use seen in oxide electronics is due primarily to their high carrier mobilities and their ability to be fabricated at low temperatures. However, since the majority of oxide semiconductors are n-type oxides, current applications are limited to unipolar devices, eventually developing oxide-based bipolar devices such as p-n diodes and complementary metal-oxide semiconductors. We have contributed to wide range of oxide semiconductors and their electronics and optoelectronic device applications. Particularly, we have demonstrated n-type oxide-based thin film transistors (TFT), integrating In2O3-based n-type oxide semiconductors from binary cation materials to ternary cation species including InZnO, InGaZnO (IGZO), and InAlZnO. We have suggested channel/metallization contact strategies to achieve stable TFT performance, identified vacancy-based native defect doping mechanisms, suggested interfacial buffer layers to promote charge injection capability, and established the role of third cation species on the carrier generation and carrier transport. More recently, we have reported facile manufacturing of p-type SnOx through reactive magnetron sputtering from a Sn metal target. The fabricatedmore »p-SnOx was found to be devoid of metallic phase of Sn from x-ray photoelectron spectroscopy and demonstrated stable performance in a fully oxide based p-n heterojunction together with n-InGaZnO. The oxide-based p-n junctions exhibited a high rectification ratio greater than 103 at ±3 V, a low saturation current of ~2x10-10, and a small turn-on voltage of -0.5 V. With all the previous achievements and investigations about p-type oxide semiconductors, challenges remain for implementing p-type oxide realization. For the implementation of oxide-based p-n heterojunctions, the performance needs to be further enhanced. The current on/off ration may be limited, in our device structure, due to either high reverse saturation current (or current density) or non-ideal performance. In this study, two rational strategies are suggested to introduce an “intrinsic” layer, which is expected to reduce the reverse saturation current between p-SnOx and n-IGZO and hence increase the on/off ratio. The carrier density of n-IGZO is engineered in-situ during the sputtering process, by which compositionally homogeneous IGZO with significantly reduced carrier density is formed at the interface. Then, higher carrier density IGZO is formed continuously on the lower carrier density IGZO during the sputtering process without any exposure of the sample to the air. Alternatively, heterogeneous oxides of MgO and SiO2 are integrated into between p-SnOx and n-IGZO, by which the defects on the surface can be passivated. The interfacial properties are thoroughly investigated using transmission electron microscopy and atomic force microscopy. The I-V characteristics are compared between the set of devices integrated with two types of “intrinsic” layers. The current research results are expected to contribute to the development of p-type oxides and their industrial application manufacturing process that meets current processing requirements, such as mass production in p-type oxide semiconductors.« less

In recent years, oxide electronics has emerged as one of the most promising new technologies for a variety of electrical and optoelectronic applications, including next-generation displays, solar cells, batteries, and photodetectors. Oxide electronics have a lot of potential because of their high carrier mobilities and ability to be manufactured at low temperatures. However, the preponderance of oxide semiconductors is n-type oxides, limiting present applications to unipolar devices and stifling the development of oxide-based bipolar devices like p-n diodes and complementary metal-oxide–semiconductors. We have contributed to oxide electronics, particularly on transition metal oxide semiconductors of which the cations include In, Zn, Sn and Ga. We have integrated these oxide semiconductors into thin film transistors (TFTs) as active channel layer in light of the unique combination of electronic and optical properties such as high carrier mobility (5-10 cm2/Vs), optical transparency in the visible regime (>~90%) and mild thermal budget processing (200-400°C). In this study, we achieved four different results. The first result is that unlike several previous reports on oxide p-n junctions fabricated exploiting a thin film epitaxial growth technique (known as molecular beam epitaxy, MBE) or a high-powered laser beam process (known as pulsed laser deposition, PLD) that requires ultra-high vacuummore »conditions, a large amount of power, and is limited for large-area processing, we demonstrate oxide-based heterojunction p-n diodes that consist of sputter-synthesized p-SnOx and n-IGZO of which the manufacturing routes are in-line with current manufacturing requirements. The second result is that the synthesized p-SnOx films are devoid of metallic Sn phases (i.e., Sn0 state) with carrier density tuneability and high carrier mobility (> 2 cm2/Vs). The third result is that the charge blocking performance of the metallurgical junction is significantly enhanced by the engineering of trap/defect density of n-IGZO, which is identified using photoelectron microscopy and valence band measurements. The last result is that the resulting oxide-based p-n heterojunction exhibits a high rectification ratio greater than 103 at ±3 V (highest among the sputter-processed oxide junctions), a low saturation current of ~2×10-10 A, and a small turn-on voltage of ~0.5 V. The outcomes of the current study are expected to contribute to the development of p-type oxides and their industrial device applications such as p-n diodes of which the manufacturing routes are in-line with the current processing requirements.« less

It is urgent to enhance battery energy storage capability to satisfy the increasing energy demand in modern society and reduce the average energy capacity cost. Among the candidates for next-generation high energy storage systems, the lithium-sulfur battery is especially attractive because of its high theoretical specific energy (around 2600 W h kg-1) and cost savings potential.1 In addition to the high theoretical capacity of sulfur cathode as high as 1,673 mA h g-1, sulfur is further appealing due to its abundance in nature, low cost, and low toxicity. Despite these advantages, the application of sulfur cathodes to date has been hindered by a number of obstacles, including low active material loading, low electronic conductivity, shuttle effects, and sluggish sulfur conversion kinetics.2 The traditional 2D planer thick electrode is considered as a general approach to enhance the mass loading of the lithium-sulfur (Li-S) battery.3 However, the longer diffusion length of lithium ions required in the thick electrode decrease the wettability of the electrolyte (into the entire cathode) and utilization ratio of active materials.4 Encapsulating active sulfur in carbon hosts is another common method to improve the performance of sulfur cathodes by enhancing the electronic conductivity and restricting shuttle effects. Nevertheless, itmore »is also reported that the encapsulation approach causes unfavorable carbon agglomeration with low dimensional carbons and a low energy density of the battery with high dimensional carbons. Although an effort to induce defects in the cathode was made to promote sulfur conversion kinetic conditions, only one type of defect has demonstrated limited performance due to the strong adsorption of the uncatalyzed clusters to the defects (i.e.: catalyst poisoning). 5 To mitigate the issues listed above, herein we propose a novel sulfur electrode design strategy enabled by additive manufacturing and oxidative chemical vapor deposition (oCVD).6,7 Specifically, the electrode is designed to have a hierarchal hollow structure via a stereolithography technique to increase sulfur usage. Microchannels are constructed on the tailored sulfur cathode to further fortify the wettability of the electrolyte. The as-printed cathode is then sintered at 700 °C in a reducing atmosphere (e.g.: H2) in order to generate a carbon skeleton (i.e.: carbonization of resin) with intrinsic carbon defects. A cathode treatment with benzene sulfonic acid further induces additional defects (non-intrinsic) to enhance the sulfur conversion kinetic. Furthermore, intrinsic defects engineering is expected to synergistically create favorable sulfur conversion conditions and mitigate the catalyst poisoning issue. In this study, the oCVD technique is leveraged to produce a conformal coating layer to eliminate shuttle effects, unfavored in the Li-S battery performance. Identified by SEM and TEM characterizations, the oCVD PEDOT is not only covered on the surface of the cathode but also the inner surface of the microchannels. High resolution x-ray photoelectron spectroscopy analyses (C 1s and S 2p orbitals) between pristine and modified sample demonstrate that the high concentration of the defects have been produced on the sulfur matrix after sintering and posttreatment. In-operando XRD diffractograms show that the Li2S is generated in the oCVD PEDOT-coated sample during the charge and discharge process even with a high current density, confirming an eminent sulfur conversion kinetic condition. In addition, ICP-OES results of lithium metal anode at different states of charge (SoC) verify that the shuttle effects are excellently restricted by oCVD PEDOT. Overall, the high mass loading (> 5 mg cm-2) with elevated sulfur utilization ratio, accelerated reaction kinetics, and stabilized electrochemical process have been achieved on the sulfur cathode by implementing this innovative cathode design strategy. The results of this study demonstrate significant promises of employing pure sulfur powder with high electrochemical performance and suggest a pathway to the higher energy and power density battery.« less

Metal-ion batteries (e.g., lithium and sodium ion batteries) are the promising power sources for portable electronics, electric vehicles, and smart grids. Recent metal-ion batteries with organic liquid electrolytes still suffer from safety issues regarding inflammability and insufficient lifetime.1 As the next generation energy storage devices, all-solid-state batteries (ASSBs) have promising potentials for the improved safety, higher energy density, and longer cycle life than conventional Li-ion batteries.2 The nonflammable solid electrolytes (SEs), where only Li ions are mobile, could prevent battery combustion and explosion since the side reactions that cause safety issues as well as degradation of the battery performance are largely suppressed. However, their practical application is hampered by the high resistance arising at the solid–solid electrode–electrolyte interface (including cathode-electrolyte interface and anode-electrolyte interface).3 Several methods have been introduced to optimize the contact capability as well as the electrochemical/chemical stability between the metal anodes (i.e.: Li and Na) and the SEs, which exhibited decent results in decreasing the charge transfer resistance and broadening the range of the stable energy window (i.e., lowing the chemical potential of metal anode below the highest occupied molecular orbital of the SEs).4 Nevertheless, mitigation for the cathode in ASSB is tardily developed because: (1) themore »porous structure of the cathode is hard to be infiltrated by SEs;5 (2) SEs would be oxidized and decomposed by the high valence state elements at the surface of the cathode at high state of charge.5 Herein, we demonstrate a universal cathode design strategy to achieve superior contact capability and high electrochemical/chemical stability with SEs. Stereolithography is adopted as a manufacturing technique to realize a hierarchical three-dimensional (HTD) electrode architecture with micro-size channels, which is expected to provide larger contact areas with SEs. Then, the manufactured cathode is sintered at 700 °C in a reducing atmosphere (e.g.: H2) to accomplish the carbonization of the resin, delivering sufficiently high electronic conductivity for the cathode. To avoid the direct exposure of the cathode active materials to the SEs, oxidative chemical vapor deposition technique (oCVD) is leveraged to build conformal and highly conducting poly(3,4-ethylenedioxythiophene) (PEDOT) on the surface of the HTD cathode.6 To demonstrate our design strategy, both NCM811 and Na3V2(PO4)3 is selected as active materials in the HTD cathode, then each cathode is paired with organic (polyacrylonitrile-based) and inorganic (sulfur-based) SEs assembled into two batteries (total four batteries). SEM and TEM reveal the micro-size HTD structure with built-in channels. Featured by the HTD architecture, the intrinsic kinetic and thermodynamic conditions will be enhanced by larger surface contact areas, more active sites, improved infusion and electrolyte ion accessibility, and larger volume expansion capability. Disclosed by X-ray computed tomography, the interface between cathode and SEs in the four modified samples demonstrates higher homogeneity at the interface between the cathode and SEs than that of all other pristine samples. Atomic force microscopy is employed to measure the potential image of the cross-sectional interface by the peak force tapping mode. The average potential of modified samples is lower than that of pristine samples, which confirms a weakened space charge layer by the enhanced contact capability. In addition, through Electron Energy Loss Spectroscopy coupled with Scanning Transmission Electron Microscopy, the preserved interface between HTD cathode and SE is identified; however, the decomposing of the pristine cathode is clearly observed. In addition, Finite element method simulations validate that the diffusion dynamics of lithium ions is favored by HTD structure. Such a demonstrated universal strategy provides a new guideline to engineer cathode electrolyte interface by reconstructing electrode structures that can be applicable to all solid-state batteries in a wide range of chemical conditions.« less