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Abstract We report the growth of InSe films on semi-insulating GaAs(111)B substrates by molecular beam epitaxy (MBE). Excellent nucleation behavior resulted in the growth of smooth, single-phase InSe films. The dominant polytype was the targeted γ-InSe. Transmission electron microscopy revealed the presence of three bulk polytypes β, γ, and ε-InSe arranged in nanosized domains, which can be interpreted as sequences of stacking faults and rotational twin boundaries of γ-InSe. Additionally, a centrosymmetric Se-In-In-Se layer polymorph with$$P\bar{3}m$$ $P\bar{3}m$symmetry was identified as typically not present in bulk. Sizeable differences in their electronic properties were found, which resulted in sizeable electronic disorder arising from the nanoscale polytype arrangement that dominated the electronic transport properties. While MBE is a viable synthesis route towards stabilization of InSe polytypes not present in the bulk, an improved understanding to form the targeted polymorph is required to ultimately inscribe a layer sequence on demand utilizing bottom-up synthesis approaches. 

This paper presents \textit{OFHE}, an electro-optical accelerator designed to process Discretized TFHE (DTFHE) operations, which encrypt multi-bit messages and support homomorphic multiplications, lookup table operations and full-domain functional bootstrappings. While DTFHE is more efficient and versatile than other fully homomorphic encryption schemes, it requires 32-, 64-, and 128-bit polynomial multiplications, which can be time-consuming. Existing TFHE accelerators are not easily upgradable to support DTFHE operations due to limited datapaths, a lack of datapath bit-width reconfigurability, and power inefficiencies when processing FFT and inverse FFT (IFFT) kernels. Compared to prior TFHE accelerators, OFHE addresses these challenges by improving the DTFHE operation latency by 8.7\%, the DTFHE operation throughput by $$57\%$$, and the DTFHE operation throughput per Watt by $$94\%$$. 

Photonic integrated circuits (PICs) with rapid prototyping and reprogramming capabilities promise revolutionary impacts on a plethora of photonic technologies. We report direct-write and rewritable photonic circuits on a low-loss phase-change material (PCM) thin film. Complete end-to-end PICs are directly laser-written in one step without additional fabrication processes, and any part of the circuit can be erased and rewritten, facilitating rapid design modification. We demonstrate the versatility of this technique for diverse applications, including an optical interconnect fabric for reconfigurable networking, a photonic crossbar array for optical computing, and a tunable optical filter for optical signal processing. By combining the programmability of the direct laser writing technique with PCM, our technique unlocks opportunities for programmable photonic networking, computing, and signal processing. Moreover, the rewritable photonic circuits enable rapid prototyping and testing in a convenient and cost-efficient manner, eliminate the need for nanofabrication facilities, and thus promote the proliferation of photonics research and education to a broader community. 

We demonstrate a chip-scale multichannel acousto-optic beam steering (AOBS) technique on the lithium niobate on insulator (LNOI) platform, realizing compact visible-light continuous beam steering.