A<sc>bstract</sc> We develop Standard Model Effective Field Theory (SMEFT) predictions ofσ($$ \mathcal{GG} $$ →h), Γ(h→$$ \mathcal{GG} $$ ), Γ(h→$$ \mathcal{AA} $$ ) to incorporate full two loop Standard Model results at the amplitude level, in conjunction with dimension eight SMEFT corrections. We simultaneously report consistent Γ(h→$$ \overline{\Psi}\Psi $$ ) results including leading QCD corrections and dimension eight SMEFT corrections. This extends the predictions of the former processes Γ, σto a full set of corrections at$$ \mathcal{O}\left({\overline{v}}_T^2/{\varLambda}^2{\left(16{\pi}^2\right)}^2\right) $$ and$$ \mathcal{O}\left({\overline{v}}_T^4/{\Lambda}^4\right) $$ , where$$ {\overline{v}}_T $$ is the electroweak scale vacuum expectation value and Λ is the cut off scale of the SMEFT. Throughout, cross consistency between the operator and loop expansions is maintained by the use of the geometric SMEFT formalism. For Γ(h→$$ \overline{\Psi}\Psi $$ ), we include results at$$ \mathcal{O}\left({\overline{v}}_T^2/{\Lambda}^2\left(16{\pi}^2\right)\right) $$ in the limit where subleadingmΨ→ 0 corrections are neglected. We clarify how gauge invariant SMEFT renormalization counterterms combine with the Standard Model counter terms in higher order SMEFT calculations when the Background Field Method is used. We also update the prediction of the total Higgs width in the SMEFT to consistently include some of these higher order perturbative effects. 
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                            Mixed polytype/polymorph formation in InSe films grown by molecular beam epitaxy on GaAs(111)B
                        
                    
    
            Abstract We report the growth of InSe films on semi-insulating GaAs(111)B substrates by molecular beam epitaxy (MBE). Excellent nucleation behavior resulted in the growth of smooth, single-phase InSe films. The dominant polytype was the targeted γ-InSe. Transmission electron microscopy revealed the presence of three bulk polytypes β, γ, and ε-InSe arranged in nanosized domains, which can be interpreted as sequences of stacking faults and rotational twin boundaries of γ-InSe. Additionally, a centrosymmetric Se-In-In-Se layer polymorph with$$P\bar{3}m$$ symmetry was identified as typically not present in bulk. Sizeable differences in their electronic properties were found, which resulted in sizeable electronic disorder arising from the nanoscale polytype arrangement that dominated the electronic transport properties. While MBE is a viable synthesis route towards stabilization of InSe polytypes not present in the bulk, an improved understanding to form the targeted polymorph is required to ultimately inscribe a layer sequence on demand utilizing bottom-up synthesis approaches. 
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                            - PAR ID:
- 10573435
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- npj 2D Materials and Applications
- Volume:
- 9
- Issue:
- 1
- ISSN:
- 2397-7132
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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