Search for: All records

Observation of the onset of color transparency in baryons would provide a new means of studying the nuclear strong force and would be the first clear evidence of baryons transforming into a color-neutral point-like size in the nucleus as predicted by quantum chromodynamics. Recent C(e,e′p) results from electron-scattering did not observe the onset of color transparency (CT) in protons up to spacelike four-momentum transfers squared, Q2=14.2 GeV2. The traditional methods of searching for CT in (e,e′p) scattering use heavy targets favoring kinematics with already initially reduced final state interactions (FSIs) such that any CT effect that further reduces FSIs will be small. The reasoning behind this choice is the difficulty in accounting for all FSIs. D(e,e′p)n, on the other hand, has well-understood FSI contributions from double scattering with a known dependence on the kinematics and can show an increased sensitivity to hadrons in point-like configurations. Double scattering is the square of the re-scattering amplitude in which the knocked-out nucleon interacts with the spectator nucleon, a process that is suppressed in the presence of point-like configurations and is particularly well-studied for the deuteron. This suppression yields a quadratic sensitivity to CT effects and is strongly dependent on the choice of kinematics. Here, we describe a possible Jefferson National Accelerator Facility (JLab) electron-scattering experiment that utilizes these kinematics and explores the potential signal for the onset of CT with enhanced sensitivity as compared to recent experiments. 

Printing enabled solution processing of semiconductors, especially Cu-based films, is an inexpensive and low-energy fabrication route for p-type thin-film transistors that are critical components of printed electronics. The state-of-the-art route is limited by a gap between ink compositions that are printable and ink compositions that enable high electrical performance at low processing temperatures. We overcome this gap based on the insight that the hole density of CuI can be tuned by alloying with CuBr while achieving a higher on/off ratio due to the lower formation energy of copper vacancies in CuBr than in CuI. We develop stable and printable precursor inks from binary metal halides that undergo post-printing recrystallization into a dense CuBrI thin film at temperatures as low as 60 °C. Adjusting the CuI/CuBr ratio affects the electrical properties. CuBr 0.2 I 0.8 films achieve the highest field-effect mobility among CuI based thin-film transistors (9.06 ± 1.94 cm 2 V −1 s −1 ) and an average on/off ratio of 10 2 –10 5 at a temperature of 150 °C. This performance is comparable to printed n-type Cu-based TFT that needs temperatures as high as 400 °C. (mobility = 0.22 cm 2 V −1 s −1 , on/off ratio = 10 3 ). The developed low-temperature processing capability is used to inkjet print textile-based CuBrI thin-film transistors at a low temperature of 60 °C to demonstrate the potential for printing complementary circuits in wearable electronic textiles.