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1. Nuclear C(e, e′p) Transparencies in a Relativistic Glauber Model

   https://doi.org/10.3390/physics4020045  

   Cosyn, Wim ; Ryckebusch, Jan ( June 2022 , Physics)

   In light of the recent Jefferson Laboratory (JLab) data for the nuclear 12C(e,e′p) transparencies, calculations, obtained in a relativistic multiple scattering Glauber approximation, are discussed. The shell-separated 12C transparencies are shown and it is concluded that the p-shell nucleons are 75% more transparent than the s-shell ones. The presented comparisons between the calculations made here and the current 12C(e,e′p) data show no clear indication for the onset of color transparency when implemented within the color diffusion model with standard parameters. 

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2. u-Channel Color Transparency Observables

   https://doi.org/10.3390/physics4020030  

   Huber, Garth M. ; Li, Wenliang B. ; Cosyn, Wim ; Pire, Bernard ( June 2022 , Physics)

   The paper proposes to study the onset of color transparency in hard exclusive reactions in the backward regime. Guided by the encouraging Jefferson Laboratory (JLab) results on backward π and ω electroproduction data at moderate virtuality Q2, which may be interpreted as the signal of an early scaling regime, where the scattering amplitude factorizes in a hard coefficient function convoluted with nucleon to meson transition distribution amplitudes, the study shows that investigations of these channels on nuclear targets opens a new opportunity to test the appearance of nuclear color transparency for a fast-moving nucleon. 

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3. Ruling out Color Transparency in Quasielastic 12C(e,e'p) up to Q2 of 14.2 (GeV/c)2

   Bhetuwal, D ; Matter, J ; Szumila-Vance, H ; Kabir, M. L ; Dutta, D ; Ent, R ; Abrams, D ; Ahmed, Z ; Aljawrneh, B ; Alsalmi, S ; et al ( February 2021 , Physical review letters)

   null (Ed.)

   Quasielastic C12(e,e′p) scattering was measured at spacelike 4-momentum transfer squared Q2=8, 9.4, 11.4, and 14.2  (GeV/c)2, the highest ever achieved to date. Nuclear transparency for this reaction was extracted by comparing the measured yield to that expected from a plane-wave impulse approximation calculation without any final state interactions. The measured transparency was consistent with no Q2 dependence, up to proton momenta of 8.5  GeV/c, ruling out the quantum chromodynamics effect of color transparency at the measured Q2 scales in exclusive (e,e′p) reactions. These results impose strict constraints on models of color transparency for protons. 

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4. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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5. Determining the helicity structure of the nucleon at the Electron Ion Collider in China

   https://doi.org/10.1007/JHEP08(2021)034  

   Anderle, Daniele Paolo ; Hou, Tie-Jiun ; Xing, Hongxi ; Yan, Mengshi ; Yuan, C.-P. ; Zhao, Yuxiang ( August 2021 , Journal of High Energy Physics)

   A bstract Understanding how sea quarks behave inside a nucleon is one of the most important physics goals of the proposed Electron-Ion Collider in China (EicC), which is designed to have a 3.5 GeV polarized electron beam (80% polarization) colliding with a 20 GeV polarized proton beam (70% polarization) at instantaneous luminosity of 2 × 10 33 cm − 2 s − 1 . A specific topic at EicC is to understand the polarization of individual quarks inside a longitudinally polarized nucleon. The potential of various future EicC data, including the inclusive and semi-inclusive deep inelastic scattering data from both doubly polarized electron-proton and electron- 3 He collisions, to reduce the uncertainties of parton helicity distributions is explored at the next-to-leading order in QCD, using the Error PDF Updating Method Package ( e P ump ) which is based on the Hessian profiling method. We show that the semi-inclusive data are well able to provide good separation between flavour distributions, and to constrain their uncertainties in the x > 0 . 005 region, especially when electron- 3 He collisions, acting as effective electron-neutron collisions, are taken into account. To enable this study, we have generated a Hessian representation of the DSSV14 set of PDF replicas, named DSSV14H PDFs. 

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