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Plastic waste has been a major social and environmental problem. Chemical upcycling of plastic waste into transportation fuels or lubricant oil has emerged as an attractive and promising approach to convert plastic waste into valuable products. However, conventional catalyst systems often require high-pressure hydrogen, prolonged residence time, and the use of noble metal catalysts. Here, we present zero-valent nickel single atoms on Mo-based MXenes (Ni/Mo2TiC2Tx) for effective hydrogenation of polyolefins. In situ spectroscopic and microscopic characterizations demonstrate the formation of Ni–Mo and Ni–C bonds at a low Ni loading, resulting in the formation of dispersed intercalated Ni atoms. The catalysts were then employed to convert polyethylene into fuels and lubricant molecules under atmospheric hydrogen pressure, short vapor residence time (τ < 1 s), and mild reaction temperature (300 °C). We further demonstrated the possibility of tuning the Ni structure by changing the Ni loading, attributed to the strong metal–support interactions (MSIs) with the Mo2TiC2Tx support. Under optimized conditions, 22.5 C% gasoline, 12.0 C% diesel, 19.2 C% jet fuel (JP-8), and 37.4 C% lubricant were produced over 0.5% Ni/Mo2TiC2Tx. This work highlights the potential of utilizing MSIs of Mo2TiC2Tx MXenes to synthesize single-atom catalysts (SACs) for upcycling plastic waste into higher-value products. 

UV‐ranged micro‐LEDs are being explored for numerous applications due to their high stability and power efficiency. However, previous reports have shown reduced external quantum efficiency (EQE) and increased leakage current due to the increase in surface‐to‐volume ratio with a decrease in the micro‐LED size. Herein, the size‐related performance for UV‐A micro‐LEDs, ranging from 8 × 8 to 100 × 100 μm^2, is studied. These devices exhibit reduced leakage current with the implementation of atomic layer deposition‐based sidewall passivation. A systematic EQE comparison is performed with minimal leakage current and a size‐independent on‐wafer EQE of around 5.5% is obtained. Smaller sized devices experimentally show enhanced EQE at high current density due to their improved heat dissipation capabilities. To the best of authors’ knowledge, this is the highest reported on‐wafer EQE demonstrated in <10 μm dimensioned 368 nm UV LEDs.