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Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

https://doi.org/10.1109/TED.2023.3339592

Stein, Shane R.; Khachariya, Dolar; Mecouch, Will; Mita, Seiji; Reddy, Pramod; Tweedie, James; Sierakowski, Kacper; Kamler, Grzegorz; Bockowski, Michal; Kohn, Erhard; et al (December 2023, IEEE Transactions on Electron Devices)

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Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

https://doi.org/10.35848/1882-0786/ac8f81

Khachariya, Dolar; Stein, Shane; Mecouch, Will; Breckenridge, M. Hayden; Rathkanthiwar, Shashwat; Mita, Seiji; Moody, Baxter; Reddy, Pramod; Tweedie, James; Kirste, Ronny; et al (September 2022, Applied Physics Express)

Abstract We report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS has an ideality factor of 1.03, a turn-on voltage of 0.75 V, and a specific differential ON-resistance of 0.6 mΩ·cm 2 . The breakdown voltage of the JBS diode is 915 V, corresponding to a maximum electric field of 3.3 MV cm −1 . These results underline that high-performance GaN JBS can be realized using Mg implantation and high-temperature UHP post-activation anneal.
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Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding

https://doi.org/10.35848/1347-4065/abab44

Guo, Qiang; Kirste, Ronny; Reddy, Pramod; Mecouch, Will; Guan, Yan; Mita, Seiji; Washiyama, Shun; Tweedie, James; Sitar, Zlatko; Collazo, Ramón (September 2020, Japanese Journal of Applied Physics)
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High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

https://doi.org/10.1063/1.5138127

Reddy, Pramod; Hayden Breckenridge, M.; Guo, Qiang; Klump, Andrew; Khachariya, Dolar; Pavlidis, Spyridon; Mecouch, Will; Mita, Seiji; Moody, Baxter; Tweedie, James; et al (February 2020, Applied Physics Letters)

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Plasma enhanced chemical vapor deposition of SiO ₂ and SiN _x on AlGaN: Band offsets and interface studies as a function of Al composition

https://doi.org/10.1116/1.5050501

Reddy, Pramod; Washiyama, Shun; Mecouch, Will; Hernandez-Balderrama, Luis H.; Kaess, Felix; Hayden Breckenridge, M.; Sarkar, Biplab; Haidet, Brian B.; Franke, Alexander; Kohn, Erhard; et al (November 2018, Journal of Vacuum Science & Technology A)

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The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN

https://doi.org/10.1063/5.0077628

Wang, Ke; Kirste, Ronny; Mita, Seiji; Washiyama, Shun; Mecouch, Will; Reddy, Pramod; Collazo, Ramón; Sitar, Zlatko (January 2022, Applied Physics Letters)

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