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Abstract We present a design and modeling of a scalable quantum processor architecture utilizing hole-spin qubits defined in gate-controlled germanium (Ge) quantum dots, where coherent spin–phonon coupling is predicted to facilitate qubit manipulation and long-range interactions. The architecture exploits the strong, electrically tunable spin–orbit interactions intrinsic to hole states in Ge, integrated with high-quality phononic crystal cavities to enable fully electrical qubit control and phonon–mediated coupling. Employing a streamlined simulation framework built upon multiband $\mathbf{k}\cdot \mathbf{p}$ modeling and finite-element methods, we quantify key performance metrics, including electrically tunableg-factors ranging from 1.3 to 2.0, spin–phonon coupling strengths up to $6.3\mathrm{MHz}$ , phononic cavity quality factors exceeding 10⁴, and phonon–mediated spin relaxation times (T₁) reaching milliseconds. The proposed architecture concurrently achieves extended spin coherence and rapid gate operations through strategic electric field modulation and engineered phononic bandgap environments. Furthermore, isotopically enriched, high-purity Ge crystals significantly enhance device coherence by minimizing disorder and hyperfine interactions. This integrated approach, merging advanced materials engineering, precise spin–orbit coupling, and phononic cavity design, establishes a promising complementary metal–oxide–semiconductor-compatible pathway toward scalable, high-fidelity quantum computing. 

Abstract This study explores the dynamics of charge transport within a cryogenic P-type Ge particle detector, fabricated from a crystal cultivated at the University of South Dakota. By subjecting the detector to cryogenic temperatures and an Am-241 source, we observe evolving charge dynamics and the emergence of cluster dipole states, leading to the impact ionization process at 40 mK. Our analysis focuses on crucial parameters: the zero-field cross-section of cluster dipole states and the binding energy of these states. For the Ge detector in our investigation, the zero-field cross-section of cluster dipole states is determined to be 8.45 × 10⁻¹¹± 4.22 × 10⁻¹²cm². Examination of the binding energy associated with cluster dipole states, formed by charge trapping onto dipole states during the freeze-out process, reveals a value of 0.034 ± 0.0017 meV. These findings shed light on the intricate charge states influenced by the interplay of temperature and electric field, with potential implications for the sensitivity in detecting low-mass dark matter. 

Using methane as a reagent to synthesize high-value chemicals and high-energy density fuels through C−C coupling has attracted intense attention in recent decades, as it avoids completely breaking all C−H bonds in CH4. In the present study, we demonstrated that the coupling of HCHO with the CH3 species from CH4 activation to produce ethanol can be accomplished on the single Pd atom−In2O3 catalyst based on the results of density functional theory (DFT) calculations. The results show that the supported single Pd atom stabilizes the CH3 species following the activation of one C−H bond of CH4, while HCHO adsorbs on the neighboring In site. Facile C−C coupling of HCHO with the methyl species is achieved with an activation barrier of 0.56 eV. We further examined the C−C coupling on other single metal atoms, including Ni, Rh, Pt, and Ag, supported on In2O3 by following a similar pathway and found that a balance of the three key steps for ethanol formation, i.e., CH4 activation, C−C coupling, and ethoxy hydrogenation, was achieved on Pd/In2O3. Taking the production of acetaldehyde and ethylene on the Pd/In2O3 catalyst into consideration, the DFT-based microkinetic analysis indicates that ethanol is the dominant product on the Pd/In2O3 catalyst. The facile C−C coupling between HCHO and dissociated CH4 makes formaldehyde a potential C1 source in the conversion and utilization of methane through an energy- and atom-efficient process. 

Abstract We explore the possibility to use advanced germanium (Ge) detectors as a low-energy solar neutrino observatory by means of neutrino-nucleus elastic scattering. A Ge detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a novel technology with experimental sensitivity for detecting low-energy solar neutrinos. Ge internal charge amplification (GeICA) detectors will amplify the charge carriers induced by neutrino interacting with Ge atoms through the emission of phonons. It is those phonons that will create charge carriers through the ionization of impurities to achieve an extremely low energy threshold of ∼0.01 eV. We demonstrate the phonon absorption, excitation, and ionization probability of impurities in a Ge detector with impurity levels of 3 × 10 10 cm −3 , 9 × 10 10 cm −3 , and 2 × 10 11 cm −3 . We present the sensitivity of such a Ge experiment for detecting solar neutrinos in the low-energy region. We show that, if GeICA technology becomes available, then a new opportunity arises to observe pp and 7 Be solar neutrinos. Such a novel detector with only 1 kg of high-purity Ge will give ∼10 events per year for pp neutrinos and ∼5 events per year for 7 Be neutrinos with a detection energy threshold of 0.01 eV. 

Abstract For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 min after applying a bias voltage, the charge energy corresponding to a baseline of the 59.54 keV $$\gamma $$ γ rays from a $$^{241}$$ 241 Am source is amplified for a short period of time and then decreases back to the baseline. The amplification of charge energy depends strongly on the applied positive bias voltage with drifting holes across the detector. No such phenomenon is visible with drifting electrons across the detector. We find that the observed charge amplification is dictated by the impact ionization of charged states, which has a strong correlation with impurity level and applied electric field. We analyze the dominant physics mechanisms that are responsible for the creation and the impact ionization of charged states. Our analysis suggests that the appropriate level of impurity in a Ge detector can enhance charge yield through the impact ionization of charged states to achieve extremely low-energy detection threshold (< 10 meV) for MeV-scale dark matter searches if the charge amplification can be stabilized. 

By studying charge trapping in germanium detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two planar detectors with different impurity levels and types are used in this study. When drifting the localized charge carriers created by α particles from the top surface across a detector at a lower bias voltage, significant charge trapping is observed when compared to operating at a higher bias voltage. The amount of charge trapping shows a strong dependence on the type of charge carriers. Electrons are trapped more than holes in a p-type detector, while holes are trapped more than electrons in an n-type detector. When both electrons and holes are drifted simultaneously using the widespread charge carriers created by γ rays inside the detector, the amount of charge trapping shows no dependence on the polarity of bias voltage.