Search for: All records

In this paper, we present a comprehensive study of the electronic structure of CeCoGe3 throughout the entire Brillouin zone in the non-magnetic regime using angle-resolved photoemission spectroscopy (ARPES). The electronic structure agrees in large part with first principles calculations, including predicted topological nodal lines. Two new features in the band structure are also observed, namely a surface state and folded bands, the latter of which is argued to originate from a unit cell reconstruction. 

The ternary phase, Yb14CdSb11, has been synthesized by flux and polycrystalline methods. The crystal structure is determined via single-crystal X-ray diffraction, revealing that it crystallizes in the Ca14AlSb11 structure type (I41/acd space group with unit cell parameters of a = 16.5962(2) & Aring; and c = 22.1346(5) & Aring;, 90 K, Z = 8, R1 = 2.65%, and wR2 = 4.58%). The polycrystalline form of the compound is synthesized from a stoichiometric reaction of Yb4Sb3, CdSb, Yb, and Sb. The elemental composition is confirmed using scanning electron microscopy and energy-dispersive spectroscopy, and phase purity is verified by powder X-ray diffraction. Thermoelectric measurements, including resistivity, Seebeck coefficient, thermal conductivity, Hall carrier concentration, and Hall mobility, are conducted from 300 to 1273 K. Yb14CdSb11 exhibits a peak zT = 0.90 at 1200 K. Carrier concentration and Hall mobility range from 6.99 x 1020-1.01 x 1021 cm-3 and 4.45-9.35 x 10-1 cm2 V-1 s-1, respectively. This carrier concentration is lower than that reported for the Zn or Mn analogs leading to a lower thermoelectric figure of merit at high temperatures. However, with appropriate doping, this phase should also be a promising p-type candidate for high-temperature energy conversion applications. 

Compositional diversity and intriguing structural features have made Zintl phases excellent candidates as thermoelectric materials. Zintl phase with 21-4-18 composition has shown high thermoelectric performance in the mid- to high-temperature ranges. The complex crystal structure and favorable transport properties of these compounds indicate the potential for high thermoelectric efficiency. Arsenic-based Eu21Zn4As18, belonging to the Ca21Mn4Sb18 structure type, exhibits a semiconductor-like p-type transport behavior and has a calculated band gap of 0.49 eV. The compound is paramagnetic at high temperatures, with an antiferromagnetic transition occurring at T-N = similar to 10 K. The moment obtained from the Curie-Weiss data fit aligns with Eu2+ ions. At the same time, the field-dependent measurement at 2 K indicates complex magnetic ordering with a saturation moment consistent with Eu2+ ions. Pristine Eu21Zn4As18 exhibits an ultralow lattice thermal conductivity of 0.40 W m(-1) K-1 at 873 K. Electronic transport properties measurement shows evidence of bipolar conduction across much of the measured temperature range (450-780 K). However, the Seebeck coefficient remains extremely high (>440 mu V K-1) across this range, indicating the potential for high zT if an appropriate dopant is found. This work represents the first report on the temperature-dependent thermal conductivity, Seebeck coefficient, and thermoelectric efficiency of the arsenic-containing Zintl phase with 21-4-18 composition, showcasing its promise for further optimization of the thermoelectric performance. 

We report on neutron diffraction, magnetoresistance, magnetization and magnetic torque measurements under high magnetic field in the helical antiferromagnet CeVGe3. This compound exhibits Kondo lattice coherence and helical antiferromagnetic (AFM) ordering at ambient pressure, similar to the well-studied CeRhIn5. Our measurements reveal that CeVGe3 undergoes a magnetic transition from an incommensurate (ICM) AFM state to an up-up-down-down commensurate (CM) AFM structure, followed by a transition to a novel phase at higher fields. A quantum phase transition occurs around 21.3 T. This rich magnetic field phase diagram closely resembles that of CeRhIn5. Furthermore, angle-dependent magnetoresistance measurements reveal that all transitions in CeVGe3 occur from the field component along the 𝑎⁢𝑏 plane. These findings highlight the intricate interplay among exchange interactions, crystal field effects, ground state properties, and crystalline symmetries. 

An electride is a compound that contains a localized electron in an empty crystallographic site. This class of materials has a wide range of applications, including superconductivity, batteries, photonics, and catalysis. Both polymorphs of Yb5Sb3 (the orthorhombic Ca5Sb3F structure type (β phase) and hexagonal Mn5Si3 structure type (α phase)) are known to be electrides with electrons localized in 0D tetrahedral cavities and 1D octahedral chains, respectively. In the case of the orthorhombic β phase, an interstitial H can occupy the 0D tetrahedral cavity, accepting the anionic electron that would otherwise occupy the site, providing the formula of Yb5Sb3Hx. DFT computations show that the hexagonal structure is energetically favored without hydrogen and that the orthorhombic structure is more stable with hydrogen. Polycrystalline samples of orthorhombic β phase Yb5Sb3Hx (x = 0.25, 0.50, 0.75, 1.0) were synthesized, and both PXRD lattice parameters and 1H MAS NMR were used to characterize H composition. Magnetic and electronic transport properties were measured to characterize the transition from the electride (semimetal) to the semiconductor. Magnetic susceptibility measurements indicate a magnetic moment that can be interpreted as resulting from either the localized antiferromagnetically coupled electride or the presence of a small amount of Yb3+. At lower H content (x = 0.25, 0.50), a low charge carrier mobility consistent with localized electride states is observed. In contrast, at higher H content (x = 0.75, 1.0), a high charge carrier mobility is consistent with free electrons in a semiconductor. All compositions show low thermal conductivity, suggesting a potentially promising thermoelectric material if charge carrier concentration can be fine-tuned. This work provides an understanding of the structure and electronic properties of the electride and semiconductor, Yb5Sb3Hx, and opens the door to the interstitial design of electrides to tune thermoelectric properties.