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In this work, we present a step‐by‐step workflow for the fabrication of 2D hexagonal boron nitride (h‐BN) nanopores which are then used to sense holo‐human serum transferrin (hSTf) protein at pH ∼8 under applied voltages ranging from +100 mV to +800 mV. 2D nanopores are often used for DNA, however, there is a great void in the literature for single‐molecule protein sensing and this, to the best of our knowledge, is the first time where h‐BN—a material with large band‐gap, low dielectric constant, reduced parasitic capacitance and minimal charge transfer induced noise—is used for protein profiling. The corresponding ΔG(change in pore conductance due to analyte translocation) profiles showed a bimodal Gaussian distribution where the lower and higher ΔGdistributions were attributed to (pseudo‐) folded and unfolded conformations respectively. With increasing voltage, the voltage induced unfolding increased (evident by decrease in ΔG) and plateaued after ∼400 mV of applied voltage. From the ΔGversus voltage profile corresponding to the pseudo‐folded state, we calculated the molecular radius of hSTf, and was found to be ∼3.1 nm which is in close concordance with the literature reported value of ∼3.25 nm.

Atomically thin materials, leveraging their low‐dimensional geometries and superior mechanical properties, are amenable to exquisite strain manipulation with a broad tunability inaccessible to bulk or thin‐film materials. Such capability offers unexplored possibilities for probing intriguing physics and materials science in the 2D limit as well as enabling unprecedented device applications. Here, the strain‐engineered anisotropic optical and electrical properties in solution‐grown, sub‐millimeter‐size 2D Te are systematically investigated through designing and introducing a controlled buckled geometry in its intriguing chiral‐chain lattice. The observed Raman spectra reveal anisotropic lattice vibrations under the corresponding straining conditions. The feasibility of using buckled 2D Te for ultrastretchable strain sensors with a high gauge factor (≈380) is further explored. 2D Te is an emerging material boasting attractive characteristics for electronics, sensors, quantum devices, and optoelectronics. The results suggest the potential of 2D Te as a promising candidate for designing and implementing flexible and stretchable devices with strain‐engineered functionalities.