Search for: All records

We develop a theory of fluid--structure interaction (FSI) between an oscillatory Newtonian fluid flow and a compliant conduit. We consider the canonical geometries of a 2D channel with a deformable top wall and an axisymmetric deformable tube. Focusing on the hydrodynamics, we employ a linear relationship between wall displacement and hydrodynamic pressure, which has been shown to be suitable for a leading-order-in-slenderness theory. The slenderness assumption also allows the use of lubrication theory, and the flow rate is related to the pressure gradient (and the tube/wall deformation) via the classical solutions for oscillatory flow in a channel and in a tube (attributed to Womersley). Then, by two-way coupling the oscillatory flow and the wall deformation via the continuity equation, a one-dimensional nonlinear partial differential equation (PDE) governing the instantaneous pressure distribution along the conduit is obtained, without \textit{a priori} assumptions on the magnitude of the oscillation frequency (\textit{i.e.}, at arbitrary Womersley number). We find that the cycle-averaged pressure (for harmonic pressure-controlled conditions) deviates from the expected steady pressure distribution, suggesting the presence of a streaming flow. An analytical perturbative solution for a weakly deformable conduit is obtained to rationalize how FSI induces such streaming. In the case of a compliant tube, the results obtained from the proposed reduced-order PDE and its perturbative solutions are validated against three-dimensional, two-way-coupled direct numerical simulations. We find good agreement between theory and simulations for a range of dimensionless parameters characterizing the oscillatory flow and the FSI, demonstrating the validity of the proposed theory of oscillatory flows in compliant conduits at arbitrary Womersley number. 

As an ultrawide bandgap (∼4.1 eV) semiconductor, single crystalline SrSnO3 (SSO) has promising electrical properties for applications in power electronics and transparent conductors. The device performance can be limited by heat dissipation issues. However, a systematic study detailing its thermal transport properties remains elusive. This work studies the temperature-dependent thermal properties of a single crystalline SSO thin film prepared with hybrid molecular beam epitaxy. By combining time-domain thermoreflectance and Debye–Callaway modeling, physical insight into thermal transport mechanisms is provided. At room temperature, the 350-nm SSO film has a thermal conductivity of 4.4 W m−1 K−1, ∼60% lower than those of other perovskite oxides (SrTiO3, BaSnO3) with the same ABO3 structural formula. This difference is attributed to the low zone-boundary frequency of SSO, resulting from its distorted orthorhombic structure with tilted octahedra. At high temperatures, the thermal conductivity of SSO decreases with temperature following a ∼T−0.54 dependence, weaker than the typical T−1 trend dominated by the Umklapp scattering. This work not only reveals the fundamental mechanisms of thermal transport in single crystalline SSO but also sheds light on the thermal design and optimization of SSO-based electronic applications. 

Experiments have shown that flow in compliant microchannels can become unstable at a much lower Reynolds number than the corresponding flow in a rigid conduit. Therefore, it has been suggested that the wall's elastic compliance can be exploited towards new modalities of microscale mixing. While previous studies mainly focused on the local instability induced by the fluid–structure interactions (FSIs) in the system, we derive a one-dimensional (1-D) model to study the FSI's effect on the global instability. The proposed 1-D FSI model is tailored to long, shallow rectangular microchannels with a deformable top wall, similar to the experiments. Going beyond the usual lubrication flows analysed in these geometries, we include finite fluid inertia and couple the reduced flow equations to a novel reduced 1-D wall deformation equation. Although a quantitative comparison with previous experiments is difficult, the behaviours of the proposed model show, qualitatively, agreement with the experimental observations, and capture several key effects. Specifically, we find the critical conditions under which the inflated base state of the 1-D FSI model is linearly unstable to infinitesimal perturbations. The critical Reynolds numbers predicted are in agreement with experimental observations. The unstable modes are highly oscillatory, with frequencies close to the natural frequency of the wall, suggesting that the observed instabilities are resonance phenomena. Furthermore, during the start-up from an undeformed initial state, self-sustained oscillations can be triggered by FSI. Our modelling framework can be applied to other microfluidic systems with similar geometric scale separation under different operating conditions. 

{"Abstract":["Zip files with codes and data to make the plots in the manuscript "Reduced modeling and global instability of finite-Reynolds-number flow in compliant rectangular channels" by Wang & Christov (2022)."]} 

{"Abstract":["The Jupyter Notebook makes the plots in the manuscript "Flow rate--pressure drop relations for new configurations of slender compliant tubes arising in microfluidics experiments" by Wang, Pande & Christov (2022). Zip file provides SimVascular case files."]} 

Abstract Solid-state control of the thermal conductivity of materials is of exceptional interest for novel devices such as thermal diodes and switches. Here, we demonstrate the ability tocontinuouslytune the thermal conductivity of nanoscale films of La_0.5Sr_0.5CoO_3-δ(LSCO) by a factor of over 5, via a room-temperature electrolyte-gate-induced non-volatile topotactic phase transformation from perovskite (withδ≈ 0.1) to an oxygen-vacancy-ordered brownmillerite phase (withδ= 0.5), accompanied by a metal-insulator transition. Combining time-domain thermoreflectance and electronic transport measurements, model analyses based on molecular dynamics and Boltzmann transport equation, and structural characterization by X-ray diffraction, we uncover and deconvolve the effects of these transitions on heat carriers, including electrons and lattice vibrations. The wide-range continuous tunability of LSCO thermal conductivity enabled by low-voltage (below 4 V) room-temperature electrolyte gating opens the door to non-volatile dynamic control of thermal transport in perovskite-based functional materials, for thermal regulation and management in device applications. 

Hydrogenated amorphous silicon (a-Si:H) has drawn keen interest as a thin-film semiconductor and superb passivation layer in high-efficiency silicon solar cells due to its low cost, low processing temperature, high compatibility with substrates, and scalable manufacturing. Although the impact of hydrogenation on the structural, optical, and electronic properties of a-Si:H has been extensively studied, the underlying physics of its impact on the thermal properties is still unclear. Here, we synthesize a-Si:H films with well-controlled hydrogen concentrations using plasma-enhanced chemical vapor deposition and systematically study the thermal conductivity of these a-Si:H films using time-domain thermoreflectance. We find that the reduction of thermal conductivity of a-Si:H films is attributed to the suppression of diffuson and propagon contributions as the hydrogen concentration increases. At the maximum hydrogen concentration of 25.4 atomic percentage, the contributions from diffusons and propagons to the thermal conductivity are decreased by 40% (from 1.10 to 0.67 W m −1 K −1 ) and 64% (from 0.61 to 0.22 W m −1 K −1 ), respectively. Such a significant reduction in the thermal conductivity of a-Si:H originates from the hydrogen induced material softening, the decrease in density, and phonon-defect scattering. The results of this work provide fundamental insights into the thermal transport properties of a-Si:H thin films, which is beneficial for the design and optimization of amorphous silicon-based technologies including photovoltaics, large-area electronics, and thermoelectric devices.