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An interspersed array of Cs and Rb atoms was used to implement a protocol for the correction of correlated errors. 

The incorporation of dilute concentrations of bismuth into traditional III–V alloys produces significant reductions in bandgap energy presenting unique opportunities in strain and bandgap engineering. However, the disparity between the ideal growth conditions for the host matrix and those required for substitutional bismuth incorporation has caused the material quality of these III–V–Bi alloys to lag behind that of conventional III–V semiconductors. InSb1−xBix, while experimentally underexplored, is a promising candidate for high-quality III–V–Bi alloys due to the relatively similar ideal growth temperatures for InSb and III–Bi materials. By identifying a highly kinetically limited growth regime, we demonstrate the growth of high-quality InSb1−xBix by molecular beam epitaxy. X-ray diffraction and Rutherford backscattering spectrometry (RBS) measurements of the alloy's bismuth concentration, coupled with smooth surface morphologies as measured by atomic force microscopy, suggest unity-sticking bismuth incorporation for a range of bismuth concentrations from 0.8% to 1.5% as measured by RBS. In addition, the first photoluminescence was observed from InSb1−xBix and demonstrated wavelength extension up to 7.6 μm at 230 K, with a bismuth-induced bandgap reduction of ∼29 meV/% Bi. Furthermore, we report the temperature dependence of the bandgap of InSb1−xBix and observed behavior consistent with that of a traditional III–V alloy. The results presented highlight the potential of InSb1−xBix as an alternative emerging candidate for accessing the longwave-infrared. 

Highly mismatched semiconductor alloys (HMAs) offer unusual combinations of bandgap and lattice constant, which are attractive for myriad applications. Dilute borides, such as BGa(In)As, are typically assumed to be HMAs. BGa(In)As can be grown in higher alloy compositions than Ga(In)NAs with comparable bandgaps, potentially enabling routes to lattice-matched telecom lasers on Si or GaAs. However, BGa(In)As remains relatively unexplored, especially with large fractions of indium. Density functional theory with HSE06 hybrid functionals was employed to study BGaInAs with 4%–44% In and 0%–11% B, including atomic rearrangement effects. All compositions showed a direct bandgap, and the character of the lowest conduction band was nearly unperturbed with the addition of B. Surprisingly, although the bandgap remained almost constant and the lattice constant followed Vegard's law with the addition of boron, the electron effective mass increased. The increase in electron effective mass was higher than in conventional alloys, though smaller than those characteristics of HMAs. This illustrates a particularly striking finding, specifically that the compositional space of BGa(In)As appears to span conventional alloy and HMA behavior, so it is not well-described by either limit. For example, adding B to GaAs introduces additional states within the conduction band, but further addition of In removes them, regardless of the atomic arrangement. 

This study investigated ethnic-racial identity developmental processes (i.e., exploration and resolution) as pathways for adolescents to develop global bicultural competence, or the ability to meet heritage and host cultural demands. The sample included 749 U.S. Mexican-origin youth (30% Mexico-born; 51% male) followed from early-to-late adolescence (Mage = 12.79 to 17.38 years). Longitudinal structural equation analyses revealed that youth’s sequential engagement in ethnic-racial identity exploration and resolution (from early-to-middle adolescence) promoted global bicultural competence in late adolescence. Findings highlight the benefits of achieving clarity about one’s ethnic-racial identity via self-exploration efforts for adolescents’ ability to respond effectively to bicultural demands. This study advances mechanisms via which ethnic-racial identity development may support youth adaptation to multiple cultural systems. 

A<sc>bstract</sc> A search for beyond-the-standard-model neutral Higgs bosons decaying to a pair of bottom quarks, and produced in association with at least one additional bottom quark, is performed with the CMS detector. The data were recorded in proton-proton collisions at a centre-of-mass energy of 13 TeV at the CERN LHC and correspond to an integrated luminosity of 36.7–126.9 fb⁻¹, depending on the probed mass range. No signal above the standard model background expectation is observed. Upper limits on the production cross section times branching fraction are set for Higgs bosons in the mass range of 125–1800 GeV. The results are interpreted in benchmark scenarios of the minimal supersymmetric standard model, as well as suitable classes of two-Higgs-doublet models.