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Spin-polarized antiferromagnets have recently gained significant interest because they combine the advantages of both ferromagnets (spin polarization) and antiferromagnets (absence of net magnetization) for spintronics applications. In particular, spin-polarized antiferromagnetic metals can be useful as active spintronics materials because of their high electrical and thermal conductivities and their ability to host strong interactions between charge transport and magnetic spin textures. We review spin and charge transport phenomena in spin-polarized antiferromagnetic metals in which the interplay of metallic conductivity and spin-split bands offers novel practical applications and new fundamental insights into antiferromagnetism. We focus on three types of antiferromagnets: canted antiferromagnets, noncollinear antiferromagnets, and collinear altermagnets. We also discuss how the investigation of spin-polarized antiferromagnetic metals can open doors to future research directions. 

Topological Dirac semimetal α-Sn exhibits unexpectedly large bilinear magnetoelectric resistance at room temperature. 

Pure spin currents can be generated via thermal excitations of magnons. These magnon spin currents serve as carriers of information in insulating materials, and controlling them using electrical means may enable energy efficient information processing. Here, we demonstrate electric field control of magnon spin currents in the antiferromagnetic insulator Cr 2 O 3 . We show that the thermally driven magnon spin currents reveal a spin-flop transition in thin-film Cr 2 O 3 . Crucially, this spin-flop can be turned on or off by applying an electric field across the thickness of the film. Using this tunability, we demonstrate electric field–induced switching of the polarization of magnon spin currents by varying only a gate voltage while at a fixed magnetic field. We propose a model considering an electric field–dependent spin-flop transition, arising from a change in sublattice magnetizations via a magnetoelectric coupling. These results provide a different approach toward controlling magnon spin current in antiferromagnets. 

Acoustic streaming has been widely used in microfluidics to manipulate various micro−/nano-objects. In this work, acoustic streaming activated by interdigital transducers (IDT) immersed in highly viscous oil is studied numerically and experimentally. In particular, we developed a modeling strategy termed the “slip velocity method” that enables a 3D simulation of surface acoustic wave microfluidics in a large domain (4 × 4 × 2 mm 3 ) and at a high frequency (23.9 MHz). The experimental and numerical results both show that on top of the oil, all the acoustic streamlines converge at two horizontal stagnation points above the two symmetric sides of the IDT. At these two stagnation points, water droplets floating on the oil can be trapped. Based on these characteristics of the acoustic streaming field, we designed a surface acoustic wave microfluidic device with an integrated IDT array fabricated on a 128° YX LiNbO 3 substrate to perform programmable, contactless droplet manipulation. By activating IDTs accordingly, the water droplets on the oil can be moved to the corresponding traps. With its excellent capability for manipulating droplets in a highly programmable, controllable manner, our surface acoustic wave microfluidic devices are valuable for on-chip contactless sample handling and chemical reactions. 

Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi 2 Se 3 and an insulating ferromagnet BaFe 12 O 19 . A charge current in Bi 2 Se 3 can switch the magnetization in BaFe 12 O 19 up and down. When the magnetization is switched by a field, a current in Bi 2 Se 3 can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe 12 O 19 . These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.