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Ferrimagnets have received renewed attention as a promising platform for spintronic applications. Of particular interest is the Mn4N from the ε-phase of the manganese nitride as an emergent rare-earth-free spintronic material due to its perpendicular magnetic anisotropy, small saturation magnetization, high thermal stability, and large domain wall velocity. We have achieved high-quality (001)-ordered Mn4N thin film by sputtering Mn onto η-phase Mn3N2 seed layers on Si substrates. As the deposited Mn thickness varies, nitrogen ion migration across the Mn3N2/Mn layers leads to a continuous evolution of the layers to Mn3N2/Mn2N/Mn4N, Mn2N/Mn4N, and eventually Mn4N alone. The ferrimagnetic Mn4N, indeed, exhibits perpendicular magnetic anisotropy and forms via a nucleation-and-growth mechanism. The nitrogen ion migration is also manifested in a significant exchange bias, up to 0.3 T at 5 K, due to the interactions between ferrimagnetic Mn4N and antiferromagnetic Mn3N2 and Mn2N. These results demonstrate a promising all-nitride magneto-ionic platform with remarkable tunability for device applications. 

Magneto-ionics has emerged as a promising approach to manipulate magnetic properties, not only by drastically reducing power consumption associated with electric current based devices but also by enabling novel functionalities. To date, magneto-ionics have been mostly explored in oxygen-based systems, while there is a surge of interest in alternative ionic systems. Here we demonstrate highly effective hydroxide-based magneto-ionics in electrodeposited α-Co(OH) 2 films. The α-Co(OH) 2 , which is a room temperature paramagnet, is switched to ferromagnetic after electrolyte gating with a negative voltage. The system is fully, magnetically reversible upon positive voltage application. The origin of the reversible paramagnetic-to-ferromagnetic transition is attributed to the ionic diffusion of hydroxyl groups, promoting the formation of metallic cobalt ferromagnetic regions. Our findings demonstrate one of the lowest turn-on voltages reported for propylene carbonate gated experiments. By tuning the voltage magnitude and sample area we demonstrate that the speed of the induced ionic effect can be drastically enhanced. 

The angle dependence of field-induced switching was investigated in magnetic tunnel junctions with in-plane magnetization and a pinned synthetic antiferromagnet reference layer. The 60 × 90 nm2 elliptical nanopillars had sharp single switches when the field was applied along the major axis of the ellipse, but even with small (20°) deviations, reversal occurred through an intermediate state. The results are interpreted with a model that includes the external applied field and the effective fields due to shape anisotropy and the fringe field of the synthetic antiferromagnet and used to extract the magnetization direction at various points in the magnetoresistance loop. The implications for faster spintronic probabilistic computing devices are discussed.