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Abstract The far-from-equilibrium solidification during additive manufacturing often creates large residual stresses that induce solid-state cracking. Here we present a strategy to suppress solid-state cracking in an additively manufactured AlCrFe₂Ni₂high-entropy alloy via engineering phase transformation pathway. We investigate the solidification microstructures formed during laser powder-bed fusion and directed energy deposition, encompassing a broad range of cooling rates. At high cooling rates (10⁴−10⁶ K/s), we observe a single-phase BCC/B2 microstructure that is susceptible to solid-state cracking. At low cooling rates (10²−10⁴ K/s), FCC phase precipitates out from the BCC/B2 matrix, resulting in enhanced ductility (~10 %) and resistance to solid-state cracking. Site-specific residual stress/strain analysis reveals that the ductile FCC phase can largely accommodate residual stresses, a feature which helps relieve residual strains within the BCC/B2 phase to prevent cracking. Our work underscores the value of exploiting the toolbox of phase transformation pathway engineering for material design during additive manufacturing. 

Abstract The discovery of ferroelectricity in AlN‐based thin films, including Al_1‐xSc_xN and Al_1‐xB_xN, over the past few years has spurred great research interests worldwide. In this review, we carefully examined the latest developments for these ferroelectric films with respect to alloy composition, temperature, film thickness, deposition condition, and fatigue endurance by electric field cycling. Looking ahead, there is an urgent need to resolve the challenge of large current leakage faced by these films, which necessitates a combined efforts from both simulations and experiments to identify the root cause and eventually come up with engineering strategies to suppress such leakage. In addition, overcoming the thickness scaling challenge to push ferroelectric thin film down to a few nanometers for better device miniaturization will also be of great interest. Considering the somewhat unexpected discovery of AlN‐based thin films with potential ferroelectric application, we believe that it will be also rewarding to further explore other III‐V‐based semiconductor materials.