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Polymer-derived ceramics (PDCs) which are fabricated through pyrolysis of preceramic polymers have attracted increasing attention due to their versatility in structure architecture design and property tailoring. Shaping at the polymer state using 3D printing allows the final ceramic products to exhibit arbitrary shapes and complex architectures that are otherwise impossible to achieve through traditional processing routes. The polymer-to-ceramic phase transition also provides additional space for mechanical property tailoring. A multiscale computational model is developed to explore the phase transition mechanisms and their correlations with processing parameters and failure response. Calculations in this work concern PMHS/DVB preceramic polymers. Molecular dynamics (MD) simulations are carried out first to track the atomic structure evolution at different temperatures. Continuum-scale ceramic phase formation is calculated on the basis of the competition between gas generation and gas diffusion. The effect of processing parameters on mechanical properties of pyrolyzed PMHS/DVB is systematically studied. Conclusions from this study can provide direct guidance for fabricating PDC composites with tailored mechanical properties.

Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 andmore »other 2D materials.« less