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Two-dimensional (2D) ferroelectric and magnetic van der Waals materials are emerging platforms for the discovery of novel cooperative quantum phenomena and development of energy-efficient logic and memory applications as well as neuromorphic and topological computing. This review presents a comprehensive survey of the rapidly growing 2D ferroic family from the synthesis perspective, including brief introductions to the top-down and bottom-up approaches for fabricating 2D ferroic flakes, thin films, and heterostructures as well as the important characterization techniques for assessing the sample properties. We also discuss the key challenges and future directions in the field, including scalable growth, property control, sample stability, and integration with other functional materials.

 

Unique temperature dependences of the out-of-plane anomalous Hall effect and longitudinal magnetoresistance were observed, which can be attributed to the changing dominance between ferromagnetic and antiferromagnetic phases in the Fe₃GeTe₂sample.

 

Understanding the thermal stability and degradation mechanism of β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) is crucial for their high-power electronics applications. This work examines the high temperature performance of the junctionless lateral β-Ga2O3 FinFET grown on a native β-Ga2O3 substrate, fabricated by metal-assisted chemical etching with Al2O3 gate oxide and Ti/Au gate metal. The thermal exposure effect on threshold voltage (Vth), subthreshold swing (SS), hysteresis, and specific on-resistance (Ron,sp), as a function of temperature up to 298 °C, is measured and analyzed. SS and Ron,sp increased with increasing temperatures, similar to the planar MOSFETs, while a more severe negative shift of Vth was observed for the high aspect-ratio FinFETs here. Despite employing a much thicker epilayer (∼2 μm) for the channel, the high temperature performance of Ion/Ioff ratios and SS of the FinFET in this work remains comparable to that of the planar β-Ga2O3 MOSFETs reported using epilayers ∼10–30× thinner. This work paves the way for further investigation into the stability and promise of β-Ga2O3 FinFETs compared to their planar counterparts. 

Lateral multiheterostructures with spatially modulated bandgaps have great potential for applications in high-performance electronic, optoelectronic and thermoelectric devices. Multiheterostructures based on transition metal tellurides are especially promising due to their tunable bandgap in a wide range and the rich variety of structural phases. However, the synthesis of telluride-based multiheterostructures remains a challenge due to the low activity of tellurium and the poor thermal stability of tellurium alloys. In this work, we synthesized monolayer WSe 2−2 x Te 2 x /WSe 2−2 y Te 2 y ( x > y ) multiheterostructures in situ using chemical vapor deposition (CVD). Photoluminescence analysis and Raman mapping confirm the spatial modulation of the bandgap in the radial direction. Furthermore, field-effect transistors with the channels parallel (type I) and perpendicular (type II) to the multiheterostructure rings were fabricated. Type I transistors exhibit enhanced ambipolar transport, due to the low energy bridges between the source and drain. Remarkably, the photocurrents in type I transistors are two orders of magnitude higher than those in type II transistors, which can be attributed to the fact that the photovoltaic photocurrents generated at the two heterojunctions are summed together in type I transistors, but they cancel each other in type II transistors. These multiheterostructures will provide a new platform for novel electronic/photonic devices with potential applications in broadband light sensing, highly sensitive imaging and ultrafast optoelectronic integrated circuits. 

Setaria italica(foxtail millet), a founder crop of East Asian agriculture, is a model plant for C4 photosynthesis and developing approaches to adaptive breeding across multiple climates. Here we established theSetariapan-genome by assembling 110 representative genomes from a worldwide collection. The pan-genome is composed of 73,528 gene families, of which 23.8%, 42.9%, 29.4% and 3.9% are core, soft core, dispensable and private genes, respectively; 202,884 nonredundant structural variants were also detected. The characterization of pan-genomic variants suggests their importance during foxtail millet domestication and improvement, as exemplified by the identification of the yield geneSiGW3, where a 366-bp presence/absence promoter variant accompanies gene expression variation. We developed a graph-based genome and performed large-scale genetic studies for 68 traits across 13 environments, identifying potential genes for millet improvement at different geographic sites. These can be used in marker-assisted breeding, genomic selection and genome editing to accelerate crop improvement under different climatic conditions.