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Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared with the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the Γ5 free exciton binding energy of 57 meV. 

Abstract We report the growth of α -Ga 2 O 3 on m -plane α -Al 2 O 3 by conventional plasma-assisted molecular-beam epitaxy and In-mediated metal–oxide-catalyzed epitaxy (MOCATAXY). We report a growth rate diagram for α -Ga 2 O 3 ( 10 1 ¯ 0 ), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of α -Ga 2 O 3 . Through the use of In-mediated catalysis, growth rates over 0.2 μ m h −1 and rocking curves with full width at half maxima of Δ ω ≈ 0.45° are achieved. Faceting is observed along the α -Ga 2 O 3 film surface and explored through scanning transmission electron microscopy.