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Title: Growth of α-Ga 2 O 3 on α-Al 2 O 3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy
Abstract We report the growth of α -Ga 2 O 3 on m -plane α -Al 2 O 3 by conventional plasma-assisted molecular-beam epitaxy and In-mediated metal–oxide-catalyzed epitaxy (MOCATAXY). We report a growth rate diagram for α -Ga 2 O 3 ( 10 1 ¯ 0 ), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of α -Ga 2 O 3 . Through the use of In-mediated catalysis, growth rates over 0.2 μ m h −1 and rocking curves with full width at half maxima of Δ ω ≈ 0.45° are achieved. Faceting is observed along the α -Ga 2 O 3 film surface and explored through scanning transmission electron microscopy.  more » « less
Award ID(s):
1719875 2039380
PAR ID:
10411551
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Japanese Journal of Applied Physics
Volume:
62
Issue:
SF
ISSN:
0021-4922
Page Range / eLocation ID:
SF1013
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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