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We present structural, magnetic, and optical properties of hexagonal HoFeO3/Al2O3 thin films deposited by Magnetron Sputtering. The x-ray diffraction patterns of HoFeO3 thin films show the c-planes of a hexagonal structure. The magnetization data display an antiferromagnetic transition temperature, TN∼120 ± 5 K and the magnetization-field hysteresis loops were measured below 100 K, confirming a weak ferromagnetism arising from a spin canting of the Fe3+ moments. The magnetization data also show an anomaly around ∼40 K due to a spin-reorientation transition caused by the Ho3+- Fe3+ interactions. We observed comparable magnetization along the ab plane and c axis although the spin canting of Fe3+ sites has a preferential component along the c axis, suggesting that the Ho3+- Fe3+ interactions dominate in the low temperature magnetic structures of hexagonal-HoFeO3. The observed electronic excitations at ∼2.29, 2.87, 3.82, 4.79, and 6.53 eV have been assigned to the Fe3+ d to d on-site as well as O 2p to Fe 3d, Ho 6s, and 5d charge-transfer excitations, respectively. The room temperature energy band gap of the hexagonal-HoFeO3 thin film was measured to be ∼1.99 ± 0.04 eV. 

This chapter presents structural, optical, and magnetic properties of multiferroic LuFeO3 thin films, deposited on single crystal sapphire and YSZ substrates by an RF magnetron sputtering system. Growth temperature and annealing are found to be critical to stabilize hexagonal LuFeO3 thin films. Radio‐Frequency (RF) Magnetron Sputtering is relatively cost effective and one of the most commonly used methods for the deposition of oxides. An RF Magnetron Sputtering offers flexibility in terms of controlling the growth conditions, maintaining the stoichiometry, and a higher deposition rate. When the lattice strain is released due to annealing, the thin film can form bigger granular structures, as observed in the AFM image, by the nucleation process. The inset shows an example of the energy band edge fitting with the direct energy band gap model.