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Title: Annealing Induced Structural Phase Change of Hexagonal‐LuFeO3 Thin Films
This chapter presents structural, optical, and magnetic properties of multiferroic LuFeO3 thin films, deposited on single crystal sapphire and YSZ substrates by an RF magnetron sputtering system. Growth temperature and annealing are found to be critical to stabilize hexagonal LuFeO3 thin films. Radio‐Frequency (RF) Magnetron Sputtering is relatively cost effective and one of the most commonly used methods for the deposition of oxides. An RF Magnetron Sputtering offers flexibility in terms of controlling the growth conditions, maintaining the stoichiometry, and a higher deposition rate. When the lattice strain is released due to annealing, the thin film can form bigger granular structures, as observed in the AFM image, by the nucleation process. The inset shows an example of the energy band edge fitting with the direct energy band gap model.  more » « less
Award ID(s):
1406766
PAR ID:
10093153
Author(s) / Creator(s):
Date Published:
Journal Name:
Ceramic Transactions Series
Volume:
264
Page Range / eLocation ID:
209-216
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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