Sc has been employed as an electron contact to a number of two-dimensional (2D) materials (e.g. MoS2, black phosphorous) and has enabled, at times, the lowest electron contact resistance. However, the extremely reactive nature of Sc leads to stringent processing requirements and metastable device performance with no true understanding of how to achieve consistent, high-performance Sc contacts. In this work, WSe2transistors with impressive subthreshold slope (109 mV dec−1) and
Tunable metal contacts at layered black-arsenic/metal interface forming during metal deposition for device fabrication
Abstract Understanding the kinetics of interfacial reaction in the deposition of metal contacts on 2D materials is important for determining the level of contact tenability and the nature of the contact itself. Here, we find that some metals, when deposited onto layered black-arsenic films using e-beam evaporation, form a-few-nm thick distinct intermetallic layer and significantly change the nature of the metal contact. In the case of nickel, the intermetallic layer is Ni 11 As 8 , whereas in the cases of chromium and titanium they are CrAs and a-Ti 3 As, respectively, with their unique structural and electronic properties. We also find that temperature, which affects interatomic diffusion and interfacial reaction kinetics, can be used to control the thickness and crystallinity of the interfacial layer. In the field effect transistors with black-arsenic channel, due to the specifics of its formation, this interfacial layer introduces a second and more efficient edge-type charge transfer pathway from the metal into the black-arsenic. Such tunable interfacial metal contacts could provide new pathways for engineering highly efficient devices and device architectures.
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- NSF-PAR ID:
- 10323956
- Date Published:
- Journal Name:
- Communications Materials
- Volume:
- 3
- Issue:
- 1
- ISSN:
- 2662-4443
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract I ON/I OFF(106) are demonstrated without post-metallization processing by depositing Sc contacts in ultra-high vacuum (UHV) at room temperature (RT). The lowest electron Schottky barrier height (SBH) is achieved by mildly oxidizing the WSe2in situ before metallization, which minimizes subsequent reactions between Sc and WSe2. Post metallization anneals in reducing environments (UHV, forming gas) degrade theI ON/I OFFby ~103and increase the subthreshold slope by a factor of 10. X-ray photoelectron spectroscopy indicates the anneals increase the electron SBH by 0.4–0.5 eV and correspondingly convert 100% of the deposited Sc contacts to intermetallic or scandium oxide. Raman spectroscopy and scanning transmission electron microscopy highlight the highly exothermic reactions between Sc and WSe2, which consume at least one layer RT and at least three layers after the 400 °C anneals. The observed layer consumption necessitates multiple sacrificial WSe2layers during fabrication. Scanning tunneling microscopy/spectroscopy elucidate the enhanced local density of states below the WSe2Fermi level around individual Sc atoms in the WSe2lattice, which directly connects the scandium selenide intermetallic with the unexpectedly large electron SBH. The interface chemistry and structural properties are correlated with Sc–WSe2transistor and diode performance. The recommended combination of processing conditions and steps is provided to facilitate consistent Sc contacts to WSe2. -
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Abstract Understanding chemical degradation at the interface between different layers in an organic photovoltaic device (OPV) is crucial to improving the long‐term stability of OPVs. Herein, molecular‐level insights are provided into the impact of different metal top electrodes on the interfacial morphology and stability of photoactive layers in PM6:Y6 bulk‐heterojunction (BHJ) OPVs. OPVs with an aluminum (Al) top electrode exhibit inferior stability compared to silver (Ag) electrode devices upon thermal annealing, whereby thermal stress induces the diffusion of both Al and Ag atoms to the PM6:Y6 BHJ layer. The diffused Al atoms cause surface recombination at the interface between the photoactive layer and an interlayer. Specifically, X‐ray photoelectron spectroscopy suggests the different local chemical environments of PM6 and Y6 moieties in PM6:Y6/Al‐contact devices. These results are corroborated by solid‐state nuclear magnetic resonance and electron paramagnetic resonance spectroscopy measurements, indicating the formation of ionic and organo‐metallic‐like species at the sub‐layers of the PM6:Y6 BHJ morphology, which are estimated to be less than 5 wt% of the PM6:Y6/Al blend. By comparison, the Ag atoms do not adversely affect PM6:Y6 BHJ morphology and the associated device physics. The investigation of reactive electrode‐BHJ interfaces by multiscale characterization techniques and device physics is expected to provide guidance to future interfacial engineering strategies to develop stable and efficient OPVs.
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1038/s43246-022-00233-7
